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參數(shù)資料
| 型號(hào)： | NDH854P |
| 廠(chǎng)商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | P-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | 5100 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SUPERSOT-8 |
| 文件頁(yè)數(shù)： | 2/8頁(yè) |
| 文件大?。?/td> | 85K |
| 代理商： | NDH854P |
Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
DSS
I
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= -250 μA
V
DS
= -24 V, V
GS
= 0 V
-30
V
Zero Gate Voltage Drain Current
-1
μA
T
J
= 55
o
C
-10
μA
I
GSSF
I
GSSR
ON CHARACTERISTICS
(Note 2)
Gate - Body Leakage, Forward
V
GS
= 20 V, V
DS
= 0 V
V
GS
= -20 V, V
DS
= 0 V
100
nA
Gate - Body Leakage, Reverse
-100
nA
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= -250 μA
-1
-1.4
-2
V
T
J
= 125
o
C
-0.8
-1.1
-1.6
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
= -10 V, I
D
= -5.1 A
0.026
0.032
T
J
= 125
o
C
0.038
0.057
V
GS
= -4.5 V, I
D
= -4.7 A
V
GS
= -10 V, V
DS
= -5 V
V
GS
= -4.5 V, V
DS
= -5 V
V
DS
= - 10 V, I
D
= -5.1 A
0.044
0.052
I
D(on)
On-State Drain Current
-15
A
-5
g
FS
DYNAMIC CHARACTERISTICS
Forward Transconductance
12
S
C
iss
C
oss
C
rss
SWITCHING CHARACTERISTICS
(Note 2)
Input Capacitance
V
= -15 V, V
GS
= 0 V,
f = 1.0 MHz
1220
pF
Output Capacitance
735
pF
Reverse Transfer Capacitance
290
pF
t
D(on)
t
r
t
D(off)
t
f
Q
g
Q
gs
Q
gd
Turn - On Delay Time
V
DD
= -10 V, I
D
= -1 A,
V
GEN
= -10 V, R
GEN
= 6
15
30
ns
Turn - On Rise Time
16
30
ns
Turn - Off Delay Time
72
140
ns
Turn - Off Fall Time
48
95
ns
Total Gate Charge
V
= -10 V,
I
D
= -5.1 A, V
GS
= -10 V
39
55
nC
Gate-Source Charge
4
nC
Gate-Drain Charge
8
nC
NDH854P Rev.D
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