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參數(shù)資料
| 型號： | NDH8520C |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Dual N & P-Channel Enhancement Mode Field Effect Transistor(雙N溝道和P溝道增強型場效應管(N溝道：漏電流2.8A, 漏源電壓30V，導通電阻0.07Ω；P溝道：漏電流-2.2A, 漏源電壓-30V，導通電阻0.11Ω）) |
| 中文描述： | 2800 mA, 30 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SUPERSOT-8 |
| 文件頁數(shù)： | 1/12頁 |
| 文件大?。?/td> | 228K |
| 代理商： | NDH8520C |
December 1996
NDH8520C
Dual N & P-Channel Enhancement Mode Field Effect Transistor
General Description
These dual N- and P-Channel enhancement mode power field
effect transistors are produced using Fairchild's proprietary,
high cell density, DMOS technology. This very high density
process is especially tailored to minimize on-state resistance
and provide superior switching performance. These devices
are particularly suited for low voltage applications such as
notebook computer power management and other battery
powered circuits where fast switching, low in-line power loss,
and resistance to transients are needed.
Features
_____________________________________________________________________
______________
Absolute Maximum Ratings
Symbol
Parameter
T
A
= 25°C unless otherwise noted
N-Channel
P-Channel
Units
V
DSS
Drain-Source Voltage
30
-30
V
V
GSS
Gate-Source Voltage
±20
±20
V
I
D
Drain Current - Continuous
(Note 1)
2.8
-2.2
A
- Pulsed
10
-10
P
D
T
J
,T
STG
Power Dissipation for Single Operation
(Note 1)
0.8
W
Operating and Storage Temperature Range
-55 to 150
°C
THERMAL CHARACTERISTICS
R
θ
JA
R
θ
JC
Thermal Resistance, Junction-to-Ambient
(Note 1)
156
°C/W
Thermal Resistance, Junction-to-Case
(Note 1)
40
°C/W
NDH8520C Rev.B
N-Channel 2.8 A, 30 V,R
DS(ON)
=0.07
@ V
GS
=10 V
R
DS(ON)
=0.1
@ V
GS
=4.5 V P-Channel -2.2 A,-30 V,
R
DS(ON)
=0.11
@ V
GS
=-10 V
R
DS(ON)
=0.18
@ V
GS
=-4.5 V.
Proprietary SuperSOT
TM
-8 package design using copper lead
frame for superior thermal and electrical capabilities.
High density cell design for extremely low R
DS(ON)
.
Exceptional on-resistance and maximum DC current capability.
1
5
6
7
8
4
3
2
1997 Fairchild Semiconductor Corporation
相關PDF資料 |
PDF描述 |
|---|---|
| NDH8521C | Dual N & P-Channel Enhancement Mode Field Effect Transistor(雙N溝道和P溝道增強型場效應管(N溝道：漏電流3.8A, 漏源電壓30V，導通電阻0.033Ω；P溝道：漏電流-2.7A, 漏源電壓-30V，導通電阻0.07Ω）) |
| NDH853N | N-Channel Enhancement Mode Field Effect Transistor |
| NDH854P | P-Channel Enhancement Mode Field Effect Transistor |
| NDHA500APAE1 | Aquamarine Laser Diode |
| NDHV310APB | Violet Laser Diode |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| NDH8521C | 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NDH853N | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| NDH854P | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:P-Channel Enhancement Mode Field Effect Transistor |
| NDHA210APAE1 | 制造商:NICHIA 制造商全稱:NICHIA CORPORATION 功能描述:Aquamarine Laser Diode |
| NDHA500APAE1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Aquamarine Laser Diode |
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