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參數(shù)資料
| 型號(hào)： | NDH8521C |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | Dual N & P-Channel Enhancement Mode Field Effect Transistor(雙N溝道和P溝道增強(qiáng)型場效應(yīng)管(N溝道：漏電流3.8A, 漏源電壓30V，導(dǎo)通電阻0.033Ω；P溝道：漏電流-2.7A, 漏源電壓-30V，導(dǎo)通電阻0.07Ω）) |
| 中文描述： | 3800 mA, 30 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SUPERSOT-8 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大小： | 101K |
| 代理商： | NDH8521C |
May 1997
NDH8521C
Dual N & P-Channel Enhancement Mode Field Effect Transistor
General Description
Features
________________________________________________________________________________
Absolute Maximum Ratings
Symbol
Parameter
T
A
= 25°C unless otherwise noted
N-Channel
P-Channel
Units
V
DSS
Drain-Source Voltage
30
-30
V
V
GSS
Gate-Source Voltage
±20
±20
V
I
D
Drain Current - Continuous
(Note 1)
3.8
-2.7
A
- Pulsed
10.5
-8
P
D
T
J
,T
STG
Power Dissipation for Single Operation
(Note 1)
0.8
W
Operating and Storage Temperature Range
-55 to 150
°C
THERMAL CHARACTERISTICS
R
θ
J A
R
θ
J C
Thermal Resistance, Junction-to-Ambient
(Note 1)
156
°C/W
Thermal Resistance, Junction-to-Case
(Note 1)
40
°C/W
NDH8521C Rev.C
These dual N- and P-Channel enhancement mode power field
effect transistors are produced using Fairchild's proprietary,
high cell density, DMOS technology. This very high density
process is especially tailored to minimize on-state resistance
and provide superior switching performance. These devices
are particularly suited for low voltage applications such as
notebook computer power management and other battery
powered circuits where fast switching, low in-line power loss,
and resistance to transients are needed.
N-Ch 3.8 A, 30 V, R
DS(ON)
=0.033
@ V
GS
=10 V
R
DS(ON)
=0.05
@ V
GS
=4.5 V
P-Ch -2.7 A, -30 V,R
DS(ON)
=0.07
@ V
GS
=-10 V
R
DS(ON)
=0.115
@ V
GS
=-4.5 V.
Proprietary SuperSOT
TM
-8 package design using copper lead
frame for superior thermal and electrical capabilities.
High density cell design for extremely low R
DS(ON)
.
Exceptional on-resistance and maximum DC current
capability.
1
5
7
8
6
4
3
2
1997 Fairchild Semiconductor Corporation
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