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參數(shù)資料
| 型號(hào)： | NDH8521C |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | Dual N & P-Channel Enhancement Mode Field Effect Transistor(雙N溝道和P溝道增強(qiáng)型場(chǎng)效應(yīng)管(N溝道：漏電流3.8A, 漏源電壓30V，導(dǎo)通電阻0.033Ω；P溝道：漏電流-2.7A, 漏源電壓-30V，導(dǎo)通電阻0.07Ω）) |
| 中文描述： | 3800 mA, 30 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SUPERSOT-8 |
| 文件頁(yè)數(shù)： | 5/8頁(yè) |
| 文件大?。?/td> | 101K |
| 代理商： | NDH8521C |
NDH8521C Rev.C
0
0.2
V , BODY DIODE FORWARD VOLTAGE (V)
0.4
0.6
0.8
1
1.2
0.0001
0.001
0.01
0.1
1
5
15
I
TJ
25°C
-55°C
V =0V
S
Figure 7. N-Channel Breakdown Voltage Variation
with Temperature.
Figure 8. N-Channel Body Diode Forward Voltage
Variation with Current and Temperature
.
Figure 9. N-Channel Capacitance Characteristics.
Figure 10. N-Channel Gate Charge Characteristics.
Typical Electrical Characteristics: N-Channel
(continued)
Figure 11. N-Channel Transconductance Variation
with Drain Current and Temperature.
-50
-25
0
25
50
75
100
125
150
0.92
0.96
1
1.04
1.08
1.12
T , JUNCTION TEMPERATURE (°C)
D
B
D
I = 250μA
0
5
10
15
20
0
2
4
6
8
10
Q , GATE CHARGE (nC)
V
G
I = 3.8A
V = 10V
20V
15V
0.1
0.2
0.5
1
3
5
10
30
50
100
200
300
500
800
1000
1500
V , DRAIN TO SOURCE VOLTAGE (V)
C
f = 1 MHz
V = 0V
C ss
C s
C ss
0
4
8
12
16
20
0
4
8
12
16
20
I , DRAIN CURRENT (A)
g
J
F
V = 5V
125°C
25°C
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相關(guān)代理商/技術(shù)參數(shù) |
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