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參數(shù)資料
| 型號(hào)： | NDH8521C |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | Dual N & P-Channel Enhancement Mode Field Effect Transistor(雙N溝道和P溝道增強(qiáng)型場(chǎng)效應(yīng)管(N溝道：漏電流3.8A, 漏源電壓30V，導(dǎo)通電阻0.033Ω；P溝道：漏電流-2.7A, 漏源電壓-30V，導(dǎo)通電阻0.07Ω）) |
| 中文描述： | 3800 mA, 30 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SUPERSOT-8 |
| 文件頁(yè)數(shù)： | 4/8頁(yè) |
| 文件大?。?/td> | 101K |
| 代理商： | NDH8521C |
NDH8521C Rev.C
Typical Electrical Characteristics: N-Channel
Figure 3. N-Channel On-Resistance Variation with
Temperature.
Figure 4. N-Channel On-Resistance
Variation with Drain Current
and Temperature.
Figure 5. N-Channel Transfer
Characteristics.
Figure 6. N-Channel Gate Threshold Variation
with Temperature.
0
0.5
1
1.5
2
2.5
3
0
4
8
12
16
20
V , DRAIN-SOURCE VOLTAGE (V)
I
D
V =10V
4.0
3.5
3.0
4.5
5.0
6.0
0
4
8
12
16
20
0.75
1
1.25
1.5
1.75
2
2.25
2.5
I , DRAIN CURRENT (A)
D
V = 3.5V
R
D
10
4.0
6.0
7.0
4.5
5.0
-50
-25
0
T , JUNCTION TEMPERATURE (°C)
25
50
75
100
125
150
0.6
0.8
1
1.2
1.4
1.6
1.8
D
R
D
V = 10V
I = 3.8A
0
4
8
12
16
20
0.25
0.5
0.75
1
1.25
1.5
1.75
2
I , DRAIN CURRENT (A)
D
V = 10V
J
25°C
-55°C
R
D
1
1.5
2
2.5
3
3.5
4
4.5
0
4
8
12
16
20
V , GATE TO SOURCE VOLTAGE (V)
I
25°C
125°C
V = 5V
DS
D
TJ
-50
-25
0
T , JUNCTION TEMPERATURE (°C)
25
50
75
100
125
150
0.6
0.7
0.8
0.9
1
1.1
1.2
G
V
t
I = 250μA
V = V
GS
Figure 1. N-Channel On-Region Characteristics.
Figure 2. N-Channel On-Resistance Variation with
Gate Voltage and Drain Current.
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相關(guān)代理商/技術(shù)參數(shù) |
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