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參數(shù)資料
| 型號(hào)： | NDH8521C |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | Dual N & P-Channel Enhancement Mode Field Effect Transistor(雙N溝道和P溝道增強(qiáng)型場(chǎng)效應(yīng)管(N溝道：漏電流3.8A, 漏源電壓30V，導(dǎo)通電阻0.033Ω；P溝道：漏電流-2.7A, 漏源電壓-30V，導(dǎo)通電阻0.07Ω）) |
| 中文描述： | 3800 mA, 30 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SUPERSOT-8 |
| 文件頁(yè)數(shù)： | 2/8頁(yè) |
| 文件大小： | 101K |
| 代理商： | NDH8521C |
Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Type
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250 μA
V
GS
= 0 V, I
D
= -250 μA
V
DS
= 24 V, V
GS
= 0 V
N-Ch
30
V
P-Ch
-30
V
I
DSS
Zero Gate Voltage Drain Current
N-Ch
1
μA
T
J
= 55
o
C
10
μA
V
DS
= -24 V, V
GS
= 0 V
P-Ch
-1
μA
T
J
= 55
o
C
-10
μA
I
GSSF
I
GSSR
ON CHARACTERISTICS
(Note 2)
Gate - Body Leakage, Forward
V
GS
= 20 V, V
DS
= 0 V
V
GS
= -20 V, V
DS
= 0 V
All
100
nA
Gate - Body Leakage, Reverse
All
-100
nA
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250 μA
N-Ch
1
1.67
2
V
T
J
= 125
o
C
0.8
1.04
1.6
V
DS
= V
GS
, I
D
= -250 μA
P-Ch
-1
-1.6
-2
T
J
= 125
o
C
-0.8
-1.2
-1.6
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
= 10 V, I
D
= 3.8 A
N-Ch
0.027
0.033
T
J
= 125
o
C
0.04
0.063
V
GS
= 4.5 V, I
D
= 3.2 A
V
GS
= -10 V, I
D
= -2.7 A
0.041
0.05
P-Ch
0.062
0.07
T
J
= 125
o
C
0.088
0.125
V
GS
= -4.5 V, I
D
= - 2.1 A
V
GS
= 10 V, V
DS
= 5 V
V
GS
= 4.5 V, V
DS
= 5 V
V
GS
= -10 V, V
DS
= -5 V
V
GS
= -4.5 V, V
DS
= -5 V
V
DS
= 5 V, I
D
= 3.8 A
V
DS
= -5 V, I
D
= -2.7 A
0.102
0.115
I
D(on)
On-State Drain Current
N-Ch
10.5
A
9
P-Ch
-8
-3
g
FS
Forward Transconductance
N-Ch
9
S
P-Ch
5.5
DYNAMIC CHARACTERISTICS
C
iss
Input Capacitance
N-Channel
V
= 15 V, V
GS
= 0 V,
f = 1.0 MHz
P-Channel
V
= -15 V, V
GS
= 0 V,
f = 1.0 MHz
N-Ch
500
pF
P-Ch
560
C
oss
Output Capacitance
N-Ch
310
pF
P-Ch
340
C
rss
Reverse Transfer Capacitance
N-Ch
125
pF
P-Ch
130
NDH8521C Rev.C
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
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