參數(shù)資料
型號: NDH8521C
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 小信號晶體管
英文描述: Dual N & P-Channel Enhancement Mode Field Effect Transistor(雙N溝道和P溝道增強(qiáng)型場效應(yīng)管(N溝道:漏電流3.8A, 漏源電壓30V,導(dǎo)通電阻0.033Ω;P溝道:漏電流-2.7A, 漏源電壓-30V,導(dǎo)通電阻0.07Ω))
中文描述: 3800 mA, 30 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝: SUPERSOT-8
文件頁數(shù): 8/8頁
文件大?。?/td> 101K
代理商: NDH8521C
NDH8521C Rev.C
Typical Thermal Characteristics:
N & P-Channel
Figure 23. N-Channel Maximum Safe Operating
Area.
0.1
0.2
0.5
V , DRAIN-SOURCE VOLTAGE (V)
1
2
5
10
20
30
50
0.01
0.02
0.05
0.1
0.2
0.5
1
2
5
10
20
I
D
RDS(ON) LIMIT
V = 10V
SINGLE PULSE
R = See Note 1
T = 25°C
10s
DC
100ms
1s
100us
1ms
10ms
0.1
0.2
0.5
- V , DRAIN-SOURCE VOLTAGE (V)
1
2
5
10
20
30
50
0.01
0.05
0.1
0.5
1
2
5
10
15
-
RDS(ON) LIMIT
D
A
DC
1s
100ms
10ms
1ms
10s
V = -10V
SINGLE PULSE
R = See Note 1
T = 25°C
0.0001
0.001
0.01
0.1
t , TIME (sec)
1
10
100
300
0.001
0.01
0.1
1
T
Single Pulse
D = 0.5
0.1
0.05
0.01
0.2
Duty Cycle, D = t / t
2
R JA
R JA
P(pk)
t
1
t
2
r
0.02
R JA
R JA
T - T = P * R (t)
Figure 24. P-Channel Maximum Safe Operating
Area.
G
D
S
V
DD
R
L
V
V
IN
OUT
V
GS
DUT
R
GEN
Figure 26. N or P-Channel Switching Test Circuit
.
Figure 27. N or P-Channel Switching Waveforms
.
Figure 25. Transient Thermal Response Curve
.
Note: Thermal characterization performed using the conditions described in note1. Transient thermal response will change
depending on the circuit board design.
10%
50%
90%
10%
90%
90%
50%
V
IN
V
OUT
on
off
d(off)
f
r
d(on)
t
t
t
t
t
t
10%
PULSE WIDTH
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