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參數(shù)資料
| 型號(hào)： | NDH853N |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | N-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | 7600 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SUPERSOT-8 |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大?。?/td> | 82K |
| 代理商： | NDH853N |
May 1997
NDH853N
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
___________________________________________________________________________________________
Absolute Maximum Ratings
T
A
= 25°C unless otherwise noted
Symbol
Parameter
NDH853N
Units
V
DSS
V
GSS
Drain-Source Voltage
30
V
Gate-Source Voltage
±20
V
I
D
Drain Current - Continuous
(Note 1a)
7.6
A
- Pulsed
23
P
D
Maximum Power Dissipation
(Note 1a)
1.8
W
(Note 1b)
1
(Note 1c)
0.9
T
J
,T
STG
Operating and Storage Temperature Range
-55 to 150
°C
THERMAL CHARACTERISTICS
R
θ
J A
R
θ
J C
Thermal Resistance, Junction-to-Ambient
(Note 1a)
70
°C/W
Thermal Resistance, Junction-to-Case
(Note 1)
20
°C/W
NDH853N Rev. C
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high cell
density, DMOS technology. This very high density process is
especially tailored to minimize on-state resistance and provide
superior switching performance. These devices are particularly
suited for low voltage applications such as battery powered
circuits or portable electronics where fast switching, low in-line
power loss, and resistance to transients are needed.
7.6 A, 30 V. R
DS(ON)
= 0.017
@ V
GS
= 10 V
R
DS(ON)
= 0.025
@ V
GS
= 4.5 V.
High density cell design for extremely low R
DS(ON)
.
Proprietary SuperSOT
TM
-8 small outline surface mount
package with high power and current handling capability.
1
5
6
7
8
4
3
2
1997 Fairchild Semiconductor Corporation
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