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參數(shù)資料
| 型號(hào)： | NDH853N |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | N-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | 7600 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SUPERSOT-8 |
| 文件頁(yè)數(shù)： | 3/6頁(yè) |
| 文件大?。?/td> | 82K |
| 代理商： | NDH853N |
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
S
V
SD
Maximum Continuous Drain-Source Diode Forward Current
1.5
A
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= 1.5 A
(Note 2)
0.72
1.2
V
Notes:
1. R
θ
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R
θ
JC
is guaranteed by
design while R
θ
CA
is determined by the user's board design.
Typical R
θ
JA
using the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment:
a. 70
o
C/W when mounted on a 1 in
2
pad of 2oz cpper.
b. 125
o
C/W when mounted on a 0.026 in
2
pad of 2oz copper.
c. 135
o
C/W when mounted on a 0.005 in
2
pad of 2oz copper.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300μs, Duty Cycle < 2.0%.
NDH853N Rev. C
1a
1b
1c
P
D
(
t
) =
T
J
T
A
R
θ
JA
(
t
)
=
T
J
T
A
R
θ
JC
+
R
θ
CA
(
t
)
=
I
D
2
(
t
) ×
R
DS
(
ON
)
@
T
J
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PDF描述 |
|---|---|
| NDH854P | P-Channel Enhancement Mode Field Effect Transistor |
| NDHA500APAE1 | Aquamarine Laser Diode |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NDH854P | 制造商:FAIRCHILD 制造商全稱(chēng):Fairchild Semiconductor 功能描述:P-Channel Enhancement Mode Field Effect Transistor |
| NDHA210APAE1 | 制造商:NICHIA 制造商全稱(chēng):NICHIA CORPORATION 功能描述:Aquamarine Laser Diode |
| NDHA500APAE1 | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:Aquamarine Laser Diode |
| NDHB510APA | 制造商:NICHIA 制造商全稱(chēng):NICHIA CORPORATION 功能描述:Blue Laser Diode |
| NDHV220APA | 制造商:NICHIA 制造商全稱(chēng):NICHIA CORPORATION 功能描述:Violet Laser Diode |
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