參數資料
型號: NDH853N
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 小信號晶體管
英文描述: N-Channel Enhancement Mode Field Effect Transistor
中文描述: 7600 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝: SUPERSOT-8
文件頁數: 2/6頁
文件大小: 82K
代理商: NDH853N
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
DSS
I
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250 μA
V
DS
= 24 V, V
GS
= 0 V
30
V
Zero Gate Voltage Drain Current
1
μA
T
J
= 55°C
10
μA
I
GSSF
I
GSSR
ON CHARACTERISTICS
(Note 2)
Gate - Body Leakage, Forward
V
GS
= 20 V, V
DS
= 0 V
V
GS
= -20 V, V
DS
= 0 V
100
nA
Gate - Body Leakage, Reverse
-100
nA
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250 μA
1
1.5
2
V
T
J
= 125°C
0.7
1
1.6
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
= 10 V, I
D
= 7.6 A
0.014
0.017
T
J
= 125°C
0.02
0.031
V
GS
= 4.5 V, I
D
= 6.7 A
V
GS
= 10 V, V
DS
= 5 V
V
DS
= 10 V, I
D
= 7.6 A
0.021
0.025
I
D(on)
g
FS
DYNAMIC CHARACTERISTICS
On-State Drain Current
23
A
Forward Transconductance
18
S
C
iss
C
oss
C
rss
SWITCHING CHARACTERISTICS
(Note 2)
Input Capacitance
V
= 15 V, V
GS
= 0 V,
f = 1.0 MHz
1140
pF
Output Capacitance
630
pF
Reverse Transfer Capacitance
210
pF
t
D(on)
t
r
t
D(off)
t
f
Q
g
Q
gs
Q
gd
Turn - On Delay Time
V
DD
= 10 V, I
D
= 1 A,
V
GEN
= 10 V, R
GEN
= 6
14
30
ns
Turn - On Rise Time
24
50
ns
Turn - Off Delay Time
73
120
ns
Turn - Off Fall Time
48
80
ns
Total Gate Charge
V
= 15 V,
I
D
= 7.6 A, V
GS
= 10 V
38
50
nC
Gate-Source Charge
2.8
nC
Gate-Drain Charge
12.7
nC
NDH853N Rev. C
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