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參數(shù)資料
| 型號(hào)： | NDH853N |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | N-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | 7600 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SUPERSOT-8 |
| 文件頁(yè)數(shù)： | 5/6頁(yè) |
| 文件大?。?/td> | 82K |
| 代理商： | NDH853N |
NDH853N Rev. C
-50
-25
0
25
50
75
100
125
150
0.94
0.96
0.98
1
1.02
1.04
1.06
1.08
1.1
T , JUNCTION TEMPERATURE (°C)
D
I = 250μA
B
D
0
0.2
V , BODY DIODE FORWARD VOLTAGE (V)
0.4
0.6
0.8
1
1.2
0.0001
0.001
0.01
0.1
1
10
30
I
S
J
25°C
-55°C
V = 0V
GS
Figure 7. Breakdown Voltage Variation with
Temperature.
Figure 8. Body Diode Forward Voltage Variation
with Source Current and
Temperature.
Typical Electrical Characteristics
(continued)
0
10
20
30
40
0
2
4
6
8
10
Q , GATE CHARGE (nC)
V
G
I = 7.6A
20V
15V
V = 10V
0.1
0.2
0.5
1
2
5
10
20
30
100
200
300
500
1000
2000
3000
V , DRAIN TO SOURCE VOLTAGE (V)
C
C ss
f = 1 MHz
V = 0V
C ss
C ss
G
D
S
V
DD
R
L
V
V
IN
OUT
V
GS
DUT
R
GEN
Figure 9. Capacitance Characteristics.
Figure 10. Gate Charge Characteristics.
Figure 11. Switching Test Circuit.
Figure 12. Switching Waveforms.
10%
50%
90%
10%
90%
90%
50%
V
IN
V
OUT
on
off
d(off)
f
r
d(on)
t
t
t
t
t
t
INVERTED
10%
PULSE WIDTH
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| NDH854P | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:P-Channel Enhancement Mode Field Effect Transistor |
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| NDHA500APAE1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Aquamarine Laser Diode |
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| NDHV220APA | 制造商:NICHIA 制造商全稱:NICHIA CORPORATION 功能描述:Violet Laser Diode |
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