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參數(shù)資料
| 型號： | NDH853N |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | N-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | 7600 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SUPERSOT-8 |
| 文件頁數(shù)： | 4/6頁 |
| 文件大?。?/td> | 82K |
| 代理商： | NDH853N |
NDH853N Rev. C
0
0.5
1
1.5
2
2.5
3
0
5
10
15
20
25
30
V , DRAIN-SOURCE VOLTAGE (V)
I
D
4.0
3.5
4.5
V =10V
6.0
3.0
2.5
0
5
10
I , DRAIN CURRENT (A)
15
20
25
30
0.5
1
1.5
2
2.5
3
D
V = 3.5V
R
D
5.0
4.5
4.0
10
6.0
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation
withDrain Current and Gate Voltage.
Typical Electrical Characteristics
-50
-25
0
T , JUNCTION TEMPERATURE (°C)
25
50
75
100
125
150
0.6
0.8
1
1.2
1.4
1.6
D
V = 10V
I = 7.6A
R
D
0
5
10
15
20
0.6
0.8
1
1.2
1.4
1.6
1.8
I , DRAIN CURRENT (A)
D
TJ
25°C
V = 10 V
-55°C
R
D
Figure 3. On-Resistance Variation
with Temperature.
Figure 4. On-Resistance Variation
with Drain Current and Temperature.
0.5
1
1.5
V , GATE TO SOURCE VOLTAGE (V)
2
2.5
3
3.5
4
4.5
0
5
10
15
20
25
30
I
D
25°C
125°C
V = 10V
J
-50
-25
0
T , JUNCTION TEMPERATURE (°C)
25
50
75
100
125
150
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
G
I = 250μA
V = V
GS
V
t
Figure 5. Transfer Characteristics.
Figure 6. Gate Threshold Variation
with Temperature.
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