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參數(shù)資料
| 型號： | NDH853N |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | N-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | 7600 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SUPERSOT-8 |
| 文件頁數(shù)： | 6/6頁 |
| 文件大小： | 82K |
| 代理商： | NDH853N |
NDH853N Rev. C
0
5
10
I , DRAIN CURRENT (A)
15
20
25
30
0
5
10
15
20
25
30
35
g
TJ
25°C
F
V =10V
125°C
Figure 16. Maximum Safe Operating Area.
Typical Electrical and Thermal Characteristics
(continued)
0
0.2
0.4
0.6
0.8
1
4
5
6
7
8
9
2oz COPPER MOUNTING PAD AREA (in )
I
D
1c
1b
1a
4.5"x5" FR-4 Board
T = 25 C
Still Air
V = 10V
o
0
0.2
2oz COPPER MOUNTING PAD AREA (in )
0.4
0.6
0.8
2
1
0
0.5
1
1.5
2
2.5
S
1c
1b
1a
4.5"x5" FR-4 Board
T = 25 C
Still Air
o
0.1
0.2
0.5
V , DRAIN-SOURCE VOLTAGE (V)
1
2
5
10
30
50
0.01
0.03
0.1
0.3
1
3
10
30
50
I
D
DC
1s
10ms
100ms
1ms
RDS(ON) LIMIT
V = 10V
SINGLE PULSE
R =See Note1c
T = 25°C
JA
100us
Figure 14. SOT-8 Maximum Steady-State Power
Dissipation versus Copper Mounting Pad
Area.
Figure 15. Maximum Steady-State Drain Current
versus Copper Mounting Pad Area.
0.0001
0.001
0.01
0.1
t , TIME (sec)
1
10
100
300
0.01
0.02
0.03
0.05
0.1
0.2
0.3
0.5
1
T
Single Pulse
D = 0.5
0.1
0.05
0.02
0.01
0.2
Duty Cycle, D = t / t
2
R (t) = r(t) * R
R = See Note 1c
T - T = P * R (t)
P(pk)
t
1
t
2
r
Figure 17. Transient Thermal Response Curve
.
Note: Thermal characterization performed using the conditions described in note 1c. Transient thermal response will change
depending on the circuit board design.
Figure 13. Transconductance Variation
with Drain Current and Temperature.
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