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參數(shù)資料
| 型號： | NDH8521C |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Dual N & P-Channel Enhancement Mode Field Effect Transistor(雙N溝道和P溝道增強型場效應管(N溝道：漏電流3.8A, 漏源電壓30V，導通電阻0.033Ω；P溝道：漏電流-2.7A, 漏源電壓-30V，導通電阻0.07Ω）) |
| 中文描述： | 3800 mA, 30 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SUPERSOT-8 |
| 文件頁數(shù)： | 7/8頁 |
| 文件大小： | 101K |
| 代理商： | NDH8521C |
NDH8521C Rev.C
-50
-25
0
T , JUNCTION TEMPERATURE (°C)
25
50
75
100
125
150
0.94
0.96
0.98
1
1.02
1.04
1.06
1.08
1.1
D
I = -250μA
B
D
0.2
0.4
-V , BODY DIODE FORWARD VOLTAGE (V)
0.6
0.8
1
1.2
0.0001
0.001
0.01
0.1
0.5
1
3
10
-
TJ
25°C
-55°C
V = 0V
S
0.1
0.2
0.5
1
2
5
10
20
30
50
100
200
400
600
1000
1500
-VDS
C
C s
f = 1 MHz
V = 0 V
C ss
C s
Figure 18. P-Channel Breakdown Voltage
Variation with Temperature.
Figure 19. P-Channel Body Diode Forward
Voltage Variation with Current and
Temperature
.
Figure 20. P-Channel Capacitance Characteristics.
Figure 21. P-Channel Gate Charge Characteristics.
Typical Electrical Characteristics: P-Channel
(continued)
-15
-12
-9
-6
-3
0
0
3
6
9
12
I , DRAIN CURRENT (A)
g
TJ
25°C
F
V = -5V
125°C
Figure 22. P-Channel Transconductance Variation
with Drain Current and Temperature.
0
4
8
12
16
20
0
2
4
6
8
10
Q , GATE CHARGE (nC)
-
V =-5V
I = -2.7A
-10V
G
-15V
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相關代理商/技術參數(shù) |
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|---|---|
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| NDH854P | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:P-Channel Enhancement Mode Field Effect Transistor |
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