參數(shù)資料
型號： NDH8520C
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 小信號晶體管
英文描述： Dual N & P-Channel Enhancement Mode Field Effect Transistor(雙N溝道和P溝道增強型場效應(yīng)管(N溝道：漏電流2.8A, 漏源電壓30V，導(dǎo)通電阻0.07Ω；P溝道：漏電流-2.2A, 漏源電壓-30V，導(dǎo)通電阻0.11Ω）)
中文描述： 2800 mA, 30 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝： SUPERSOT-8
文件頁數(shù)： 2/12頁
文件大?。?/td> 228K
代理商： NDH8520C
Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Type
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250 μA
V
GS
= 0 V, I
D
= -250 μA
V
DS
= 24 V, V
GS
= 0 V
N-Ch
30
V
P-Ch
-30
V
I
DSS
Zero Gate Voltage Drain Current
N-Ch
1
μA
T
J
= 55
o
C
10
μA
V
DS
= -24 V, V
GS
= 0 V
P-Ch
-1
μA
T
J
= 55
o
C
-10
μA
I
GSSF
I
GSSR
ON CHARACTERISTICS
(Note 2)
Gate - Body Leakage, Forward
V
GS
= 20 V, V
DS
= 0 V
V
GS
= -20 V, V
DS
= 0 V
All
100
nA
Gate - Body Leakage, Reverse
All
-100
nA
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250 μA
N-Ch
1
1.6
2.8
V
T
J
= 125
o
C
0.8
1.2
2
V
DS
= V
GS
, I
D
= -250 μA
P-Ch
-1
-1.5
-3
T
J
= 125
o
C
-0.8
-1.2
-2.2
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
= 10 V, I
D
= 2.8 A
N-Ch
0.05
0.07
T
J
= 125
o
C
0.07
0.125
V
GS
= 4.5 V, I
D
= 2.3 A
V
GS
= -10 V, I
D
= -2.2 A
0.077
0.1
P-Ch
0.1
0.11
T
J
= 125
o
C
0.14
0.2
V
GS
= -4.5 V, I
D
= -1.7 A
V
GS
= 10 V, V
DS
= 5 V
V
GS
= 4.5 V, V
DS
= 5 V
V
GS
= -10 V, V
DS
= -5 V
V
GS
= -4.5 V, V
DS
= -5 V
V
DS
= 10 V, I
D
= 2.8 A
V
DS
= -10 V, I
D
= -2.2 A
0.17
0.18
I
D(on)
On-State Drain Current
N-Ch
10
A
3
P-Ch
-10
-4
g
FS
Forward Transconductance
N-Ch
5.8
S
P-Ch
3.8
DYNAMIC CHARACTERISTICS
C
iss
Input Capacitance
N-Channel
V
= 15 V, V
GS
= 0 V,
f = 1.0 MHz
P-Channel
V
= -15 V, V
GS
= 0 V,
f = 1.0 MHz
N-Ch
270
pF
P-Ch
340
C
oss
Output Capacitance
N-Ch
170
pF
P-Ch
218
C
rss
Reverse Transfer Capacitance
N-Ch
55
pF
P-Ch
100
NDH8520C Rev.B
相關(guān)PDF資料
PDF描述
NDH8521C Dual N & P-Channel Enhancement Mode Field Effect Transistor(雙N溝道和P溝道增強型場效應(yīng)管(N溝道：漏電流3.8A, 漏源電壓30V，導(dǎo)通電阻0.033Ω；P溝道：漏電流-2.7A, 漏源電壓-30V，導(dǎo)通電阻0.07Ω）)
NDH853N N-Channel Enhancement Mode Field Effect Transistor
NDH854P P-Channel Enhancement Mode Field Effect Transistor
NDHA500APAE1 Aquamarine Laser Diode
NDHV310APB Violet Laser Diode
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NDH8521C 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDH853N 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Enhancement Mode Field Effect Transistor
NDH854P 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:P-Channel Enhancement Mode Field Effect Transistor
NDHA210APAE1 制造商:NICHIA 制造商全稱:NICHIA CORPORATION 功能描述:Aquamarine Laser Diode
NDHA500APAE1 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Aquamarine Laser Diode
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