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參數(shù)資料
| 型號(hào)： | NDH8520C |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | Dual N & P-Channel Enhancement Mode Field Effect Transistor(雙N溝道和P溝道增強(qiáng)型場(chǎng)效應(yīng)管(N溝道：漏電流2.8A, 漏源電壓30V，導(dǎo)通電阻0.07Ω；P溝道：漏電流-2.2A, 漏源電壓-30V，導(dǎo)通電阻0.11Ω）) |
| 中文描述： | 2800 mA, 30 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SUPERSOT-8 |
| 文件頁(yè)數(shù)： | 3/12頁(yè) |
| 文件大小： | 228K |
| 代理商： | NDH8520C |
Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Type
Min
Typ
Max
Units
SWITCHING CHARACTERISTICS
(Note 2)
t
D(on)
Turn - On Delay Time
N-Channel
V
DD
= 10 V, I
D
= 1 A,
V
GEN
= 10 V, R
GEN
= 6
P-Channel
V
DD
= -10 V, I
D
= -1 A,
V
GEN
= -10 V, R
GEN
= 6
N-Ch
8
15
ns
P-Ch
8
15
t
r
Turn - On Rise Time
N-Ch
15
28
ns
P-Ch
18
35
t
D(off)
Turn - Off Delay Time
N-Ch
15
28
ns
P-Ch
28
50
t
f
Turn - Off Fall Time
N-Ch
5
10
ns
P-Ch
20
35
Q
g
Total Gate Charge
N-Channel
V
= 15 V,
I
D
= 2.8 A, V
GS
= 10 V
P-Channel
V
= -15 V,
I
D
= -2.2 A, V
GS
= -10 V
N-Ch
9.4
17
nC
P-Ch
10.9
14.5
Q
gs
Gate-Source Charge
N-Ch
0.8
nC
P-Ch
1.4
Q
gd
Gate-Drain Charge
N-Ch
3
nC
P-Ch
3.6
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
S
Maximum Continuous Drain-Source Diode Forward Current
N-Ch
0.67
A
P-Ch
-0.67
V
SD
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= 0.67 A
(Note2)
V
GS
= 0 V, I
S
= -0.67 A
(Note2)
N-Ch
0.7
1.2
V
P-Ch
-0.76
-1.2
Notes:
1. R
θ
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R
θ
JC
is guaranteed by
design while R
θ
CA
is determined by the user's board design.
Typical R
θ
JA
for single device operation using the board layout shown below on 4.5"x5" FR-4 PCB in a still air environment:
156
o
C/W when mounted on a 0.0025 in
2
pad of 2oz copper.
Scale 1 : 1 on letter size paper.
2. Pulse Test: Pulse Width < 300μs, Duty Cycle < 2.0%.
NDH8520C Rev.B
P
D
(
t
) =
T
J
T
A
R
θ
J A
(
t
)
=
T
J
T
A
R
θ
J C
+
R
θ
CA
(
t
)
=
I
D
2
(
t
)×
R
DS
(
ON
)
@
T
J
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NDH8521C | Dual N & P-Channel Enhancement Mode Field Effect Transistor(雙N溝道和P溝道增強(qiáng)型場(chǎng)效應(yīng)管(N溝道：漏電流3.8A, 漏源電壓30V，導(dǎo)通電阻0.033Ω；P溝道：漏電流-2.7A, 漏源電壓-30V，導(dǎo)通電阻0.07Ω）) |
| NDH853N | N-Channel Enhancement Mode Field Effect Transistor |
| NDH854P | P-Channel Enhancement Mode Field Effect Transistor |
| NDHA500APAE1 | Aquamarine Laser Diode |
| NDHV310APB | Violet Laser Diode |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NDH8521C | 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NDH853N | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| NDH854P | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:P-Channel Enhancement Mode Field Effect Transistor |
| NDHA210APAE1 | 制造商:NICHIA 制造商全稱:NICHIA CORPORATION 功能描述:Aquamarine Laser Diode |
| NDHA500APAE1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Aquamarine Laser Diode |
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