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參數(shù)資料
| 型號(hào)： | NDH8503N |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | Dual N-Channel Enhancement Mode Field Effect Transistor（3.8A，30V，0.0033Ω）(雙N溝道增強(qiáng)型場(chǎng)效應(yīng)管（漏電流3.8A, 漏源電壓30V，導(dǎo)通電阻0.033Ω）) |
| 中文描述： | 3800 mA, 30 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SUPERSOT-8 |
| 文件頁數(shù)： | 3/6頁 |
| 文件大小： | 70K |
| 代理商： | NDH8503N |
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
S
V
SD
Maximum Continuous Drain-Source Diode Forward Current
0.67
A
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= 0.67 A
(Note 2)
0.72
1.2
V
otes:
1. R
θ
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R
θ
JC
is guaranteed by
design while R
θ
CA
is determined by the user's board design.
P
D
(
t
) =
T
J
T
A
R
θ
JA
(
t
)
=
T
J
T
A
R
θ
JC
+
R
θ
CA
(
t
)
=
I
D
2
(
t
) ×
R
DS
(
ON
)
T
J
Typical R
θ
JA
for single device operation using the board layout shown below on 4.5"x5" FR-4 PCB in a still air environment:
156
o
C/W when mounted on a 0.0025 in
2
pad of 2oz copper.
Scale 1 : 1 on letter size paper.
2. Pulse Test: Pulse Width < 300μs, Duty Cycle < 2.0%.
NDH8503N Rev.C
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NDH8504P | Dual P-Channel Enhancement Mode Field Effect Transistor（-2.7A，-30V，0.07Ω）(雙P溝道增強(qiáng)型場(chǎng)效應(yīng)管（漏電流-2.7A, 漏源電壓-30V，導(dǎo)通電阻0.07Ω）) |
| NDH8520C | Dual N & P-Channel Enhancement Mode Field Effect Transistor(雙N溝道和P溝道增強(qiáng)型場(chǎng)效應(yīng)管(N溝道：漏電流2.8A, 漏源電壓30V，導(dǎo)通電阻0.07Ω；P溝道：漏電流-2.2A, 漏源電壓-30V，導(dǎo)通電阻0.11Ω）) |
| NDH8521C | Dual N & P-Channel Enhancement Mode Field Effect Transistor(雙N溝道和P溝道增強(qiáng)型場(chǎng)效應(yīng)管(N溝道：漏電流3.8A, 漏源電壓30V，導(dǎo)通電阻0.033Ω；P溝道：漏電流-2.7A, 漏源電壓-30V，導(dǎo)通電阻0.07Ω）) |
| NDH853N | N-Channel Enhancement Mode Field Effect Transistor |
| NDH854P | P-Channel Enhancement Mode Field Effect Transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NDH8504P | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual P-Channel Enhancement Mode Field Effect Transistor |
| NDH8505N | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 30V V(BR)DSS | 1.6A I(D) | SO |
| NDH8507N | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 30V V(BR)DSS | 2A I(D) | SO |
| NDH8508P | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | MATCHED PAIR | P-CHANNEL | 30V V(BR)DSS | 1.4A I(D) | SO |
| NDH8520C | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual N & P-Channel Enhancement Mode Field Effect Transistor |
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