參數(shù)資料
型號(hào)： NDH8503N
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 小信號(hào)晶體管
英文描述： Dual N-Channel Enhancement Mode Field Effect Transistor（3.8A，30V，0.0033Ω）(雙N溝道增強(qiáng)型場(chǎng)效應(yīng)管（漏電流3.8A, 漏源電壓30V，導(dǎo)通電阻0.033Ω）)
中文描述： 3800 mA, 30 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝： SUPERSOT-8
文件頁(yè)數(shù)： 2/6頁(yè)
文件大?。?/td> 70K
代理商： NDH8503N
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
DSS
I
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250 μA
V
DS
= 24 V, V
GS
= 0 V
30
V
Zero Gate Voltage Drain Current
1
μA
T
J
= 55
o
C
10
μA
I
GSSF
I
GSSR
ON CHARACTERISTICS
(Note 2)
Gate - Body Leakage, Forward
V
GS
= 20 V, V
DS
= 0 V
V
GS
= -20 V, V
DS
= 0 V
100
nA
Gate - Body Leakage, Reverse
-100
nA
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250 μA
1
1.67
2
V
T
J
= 125
o
C
0.8
1.04
1.6
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
= 10 V, I
D
= 3.8 A
0.027
0.033
T
J
= 125
o
C
0.04
0.06
V
GS
= 4.5 V, I
D
= 3.2 A
V
GS
= 10 V, V
DS
= 5 V
V
GS
= 4.5 V, V
DS
= 5 V
V
DS
= 5 V, I
D
= 3.8 A
0.041
0.05
I
D(on)
On-State Drain Current
10.5
A
9
g
FS
DYNAMIC CHARACTERISTICS
Forward Transconductance
9
S
C
iss
C
oss
C
rss
SWITCHING CHARACTERISTICS
(Note 2)
Input Capacitance
V
= 15 V, V
GS
= 0 V,
f = 1.0 MHz
500
pF
Output Capacitance
310
pF
Reverse Transfer Capacitance
125
pF
t
D(on)
t
r
t
D(off)
t
f
Q
g
Q
gs
Q
gd
Turn - On Delay Time
V
DD
= 10 V, I
D
= 1 A,
V
GS
= 10 V, R
GEN
= 6
10
18
ns
Turn - On Rise Time
15
28
ns
Turn - Off Delay Time
20
35
ns
Turn - Off Fall Time
9
18
ns
Total Gate Charge
V
= 10 V,
I
D
= 3.8 A, V
GS
= 4.5 V
18
25
nC
Gate-Source Charge
1.8
nC
Gate-Drain Charge
4.2
nC
NDH8503N Rev.C
相關(guān)PDF資料
PDF描述
NDH8504P Dual P-Channel Enhancement Mode Field Effect Transistor（-2.7A，-30V，0.07Ω）(雙P溝道增強(qiáng)型場(chǎng)效應(yīng)管（漏電流-2.7A, 漏源電壓-30V，導(dǎo)通電阻0.07Ω）)
NDH8520C Dual N & P-Channel Enhancement Mode Field Effect Transistor(雙N溝道和P溝道增強(qiáng)型場(chǎng)效應(yīng)管(N溝道：漏電流2.8A, 漏源電壓30V，導(dǎo)通電阻0.07Ω；P溝道：漏電流-2.2A, 漏源電壓-30V，導(dǎo)通電阻0.11Ω）)
NDH8521C Dual N & P-Channel Enhancement Mode Field Effect Transistor(雙N溝道和P溝道增強(qiáng)型場(chǎng)效應(yīng)管(N溝道：漏電流3.8A, 漏源電壓30V，導(dǎo)通電阻0.033Ω；P溝道：漏電流-2.7A, 漏源電壓-30V，導(dǎo)通電阻0.07Ω）)
NDH853N N-Channel Enhancement Mode Field Effect Transistor
NDH854P P-Channel Enhancement Mode Field Effect Transistor
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NDH8504P 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual P-Channel Enhancement Mode Field Effect Transistor
NDH8505N 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 30V V(BR)DSS | 1.6A I(D) | SO
NDH8507N 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 30V V(BR)DSS | 2A I(D) | SO
NDH8508P 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | MATCHED PAIR | P-CHANNEL | 30V V(BR)DSS | 1.4A I(D) | SO
NDH8520C 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual N & P-Channel Enhancement Mode Field Effect Transistor
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