參數(shù)資料
型號(hào)： NDH8502P
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 小信號(hào)晶體管
英文描述： Dual P-Channel Enhancement Mode Field Effect Transistor（-2.2A，-30V，0.11Ω）(雙P溝道增強(qiáng)型場(chǎng)效應(yīng)管（漏電流-2.2A, 漏源電壓-30V，導(dǎo)通電阻0.11Ω）)
中文描述： 2200 mA, 30 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝： SUPERSOT-8
文件頁(yè)數(shù)： 1/7頁(yè)
文件大?。?/td> 72K
代理商： NDH8502P
December 1996
NDH8502P
Dual P-Channel Enhancement Mode Field Effect Transistor
General Description
Features
___________________________________________________________________________________________
Absolute Maximum Ratings
T
A
= 25°C unless otherwise noted
Symbol
Parameter
NDH8502P
Units
V
DSS
V
GSS
Drain-Source Voltage
-30
V
Gate-Source Voltage
±20
V
I
D
Drain Current - Continuous
(Note 1)
-2.2
A
- Pulsed
-10
P
D
Maximum Power Dissipation
(Note 1)
0.8
W
T
J
,T
STG
Operating and Storage Temperature Range
-55 to 150
°C
THERMAL CHARACTERISTICS
R
θ
JA
R
θ
JC
Thermal Resistance, Junction-to-Ambient
(Note 1)
156
°C/W
Thermal Resistance, Junction-to-Case
(Note 1)
40
°C/W
NDH8502P Rev.C
SuperSOT
TM
-8 P-Channel enhancement mode power field
effect transistors are produced using Fairchild's proprietary,
high cell density, DMOS technology. This very high density
process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage
applications such as notebook computer power management
and other battery powered circuits where fast high-side
switching, and low in-line power loss are needed in a very small
outline surface mount package.
-2.2 A, -30 V. R
DS(ON)
= 0.11
@ V
GS
= -10 V
R
DS(ON)
= 0.18
@ V
GS
= -4.5 V.
Proprietary SuperSOT
TM
-8 package design using copper
lead frame for superior thermal and electrical capabilities.
High density cell design for extremely low R
DS(ON)
.
Exceptional on-resistance and maximum DC current
capability.
1
5
6
7
8
4
3
2
1997 Fairchild Semiconductor Corporation
相關(guān)PDF資料
PDF描述
NDH8503N Dual N-Channel Enhancement Mode Field Effect Transistor（3.8A，30V，0.0033Ω）(雙N溝道增強(qiáng)型場(chǎng)效應(yīng)管（漏電流3.8A, 漏源電壓30V，導(dǎo)通電阻0.033Ω）)
NDH8504P Dual P-Channel Enhancement Mode Field Effect Transistor（-2.7A，-30V，0.07Ω）(雙P溝道增強(qiáng)型場(chǎng)效應(yīng)管（漏電流-2.7A, 漏源電壓-30V，導(dǎo)通電阻0.07Ω）)
NDH8520C Dual N & P-Channel Enhancement Mode Field Effect Transistor(雙N溝道和P溝道增強(qiáng)型場(chǎng)效應(yīng)管(N溝道：漏電流2.8A, 漏源電壓30V，導(dǎo)通電阻0.07Ω；P溝道：漏電流-2.2A, 漏源電壓-30V，導(dǎo)通電阻0.11Ω）)
NDH8521C Dual N & P-Channel Enhancement Mode Field Effect Transistor(雙N溝道和P溝道增強(qiáng)型場(chǎng)效應(yīng)管(N溝道：漏電流3.8A, 漏源電壓30V，導(dǎo)通電阻0.033Ω；P溝道：漏電流-2.7A, 漏源電壓-30V，導(dǎo)通電阻0.07Ω）)
NDH853N N-Channel Enhancement Mode Field Effect Transistor
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NDH8503N 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual N-Channel Enhancement Mode Field Effect Transistor
NDH8504P 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual P-Channel Enhancement Mode Field Effect Transistor
NDH8505N 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 30V V(BR)DSS | 1.6A I(D) | SO
NDH8507N 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 30V V(BR)DSS | 2A I(D) | SO
NDH8508P 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | MATCHED PAIR | P-CHANNEL | 30V V(BR)DSS | 1.4A I(D) | SO
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