參數(shù)資料
型號(hào): NDH8502P
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 小信號(hào)晶體管
英文描述: Dual P-Channel Enhancement Mode Field Effect Transistor(-2.2A,-30V,0.11Ω)(雙P溝道增強(qiáng)型場(chǎng)效應(yīng)管(漏電流-2.2A, 漏源電壓-30V,導(dǎo)通電阻0.11Ω))
中文描述: 2200 mA, 30 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝: SUPERSOT-8
文件頁數(shù): 7/7頁
文件大?。?/td> 72K
代理商: NDH8502P
NDH8502P Rev.C
相關(guān)PDF資料
PDF描述
NDH8503N Dual N-Channel Enhancement Mode Field Effect Transistor(3.8A,30V,0.0033Ω)(雙N溝道增強(qiáng)型場(chǎng)效應(yīng)管(漏電流3.8A, 漏源電壓30V,導(dǎo)通電阻0.033Ω))
NDH8504P Dual P-Channel Enhancement Mode Field Effect Transistor(-2.7A,-30V,0.07Ω)(雙P溝道增強(qiáng)型場(chǎng)效應(yīng)管(漏電流-2.7A, 漏源電壓-30V,導(dǎo)通電阻0.07Ω))
NDH8520C Dual N & P-Channel Enhancement Mode Field Effect Transistor(雙N溝道和P溝道增強(qiáng)型場(chǎng)效應(yīng)管(N溝道:漏電流2.8A, 漏源電壓30V,導(dǎo)通電阻0.07Ω;P溝道:漏電流-2.2A, 漏源電壓-30V,導(dǎo)通電阻0.11Ω))
NDH8521C Dual N & P-Channel Enhancement Mode Field Effect Transistor(雙N溝道和P溝道增強(qiáng)型場(chǎng)效應(yīng)管(N溝道:漏電流3.8A, 漏源電壓30V,導(dǎo)通電阻0.033Ω;P溝道:漏電流-2.7A, 漏源電壓-30V,導(dǎo)通電阻0.07Ω))
NDH853N N-Channel Enhancement Mode Field Effect Transistor
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NDH8503N 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual N-Channel Enhancement Mode Field Effect Transistor
NDH8504P 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual P-Channel Enhancement Mode Field Effect Transistor
NDH8505N 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 30V V(BR)DSS | 1.6A I(D) | SO
NDH8507N 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 30V V(BR)DSS | 2A I(D) | SO
NDH8508P 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | MATCHED PAIR | P-CHANNEL | 30V V(BR)DSS | 1.4A I(D) | SO