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參數(shù)資料
| 型號(hào)： | NDH832P |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | P-Channel Enhancement Mode Field Effect Transistor（-4.2A，-20V，0.06Ω）(P溝道增強(qiáng)型MOS場(chǎng)效應(yīng)管（漏電流-4.2A, 漏源電壓-20V，導(dǎo)通電阻0.06Ω）) |
| 中文描述： | 4200 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SUPERSOT-8 |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大?。?/td> | 82K |
| 代理商： | NDH832P |
June 1996
NDH832P
P-Channel Enhancement Mode Field Effect Transistor
General Description
Features
___________________________________________________________________________________________
Absolute Maximum Ratings
T
A
= 25°C unless otherwise noted
Symbol
Parameter
NDH832P
Units
V
DSS
V
GSS
Drain-Source Voltage
-20
V
Gate-Source Voltage
-8
V
I
D
Drain Current - Continuous
(Note 1a)
-4.2
A
- Pulsed
-15
P
D
Maximum Power Dissipation
(Note 1a)
1.8
W
(Note 1b)
1
(Note 1c)
0.9
T
J
,T
STG
Operating and Storage Temperature Range
-55 to 150
°C
THERMAL CHARACTERISTICS
R
θ
JA
R
θ
JC
Thermal Resistance, Junction-to-Ambient
(Note 1a)
70
°C/W
Thermal Resistance, Junction-to-Case
(Note 1)
20
°C/W
NDH832P Rev. B2
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high cell
density, DMOS technology. This very high density process is
especially tailored to minimize on-state resistance and provide
superior switching performance. These devices are particularly
suited for low voltage applications such as notebook computer
power management and other battery powered circuits where
fast switching, low in-line power loss, and resistance to
transients are needed.
-4.2A, -20V. R
DS(ON)
= 0.06
@ V
GS
= -4.5V
R
DS(ON)
= 0.08
@ V
GS
= -2.7V
.
High density cell design for extremely low R
DS(ON).
Enhanced SuperSOT
TM
-8 small outline surface mount
package with high power and current handling capability.
1
5
6
7
8
4
3
2
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NDH833N | N-Channel Enhancement Mode Field Effect Transistor |
| NDH834P | P-Channel Enhancement Mode Field Effect Transistor（-5.6A，-20V，0.035Ω）(P溝道增強(qiáng)型MOS場(chǎng)效應(yīng)管（漏電流-5.6A, 漏源電壓-20V，導(dǎo)通電阻0.035Ω）) |
| NDH8436 | N-Channel Enhancement Mode Field Effect Transistor |
| NDH8447 | P-Channel Enhancement Mode Field Effect Transistor |
| NDH8502P | Dual P-Channel Enhancement Mode Field Effect Transistor（-2.2A，-30V，0.11Ω）(雙P溝道增強(qiáng)型場(chǎng)效應(yīng)管（漏電流-2.2A, 漏源電壓-30V，導(dǎo)通電阻0.11Ω）) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NDH833N | 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NDH834P | 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NDH8436 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| NDH8447 | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| NDH8502P | 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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