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參數(shù)資料
| 型號： | NDH832P |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | P-Channel Enhancement Mode Field Effect Transistor（-4.2A，-20V，0.06Ω）(P溝道增強型MOS場效應管（漏電流-4.2A, 漏源電壓-20V，導通電阻0.06Ω）) |
| 中文描述： | 4200 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SUPERSOT-8 |
| 文件頁數(shù)： | 4/8頁 |
| 文件大?。?/td> | 82K |
| 代理商： | NDH832P |
NDH832P Rev. B2
-4
-3
-2
-1
V , DRAIN-SOURCE VOLTAGE (V)
0
-20
-15
-10
-5
0
I
D
V = -4.5V
-2.5
-1.5
-2.0
-3.0-2.7
-3.5
-50
-25
0
T , JUNCTION TEMPERATURE (°C)
25
50
75
100
125
150
0.6
0.8
1
1.2
1.4
1.6
D
V = -4.5V
I = -4.2A
R
D
-50
-25
0
T , JUNCTION TEMPERATURE (°C)
25
50
75
100
125
150
0.6
0.7
0.8
0.9
1
1.1
1.2
G
I = -250μA
V = V
GS
V
t
-20
-16
-12
-8
-4
0
0.8
1
1.2
1.4
1.6
1.8
2
I , DRAIN CURRENT (A)
D
R
D
V = -2.5V
-3.0
-2.7
-5.0
-4.5
-4.0
-3.5
-20
-16
-12
-8
-4
0
0.5
1
1.5
2
I , DRAIN CURRENT (A)
D
TJ
25°C
-55°C
V = -4.5V
R
D
Typical Electrical Characteristics
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Gate
Voltage and Drain Current.
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with Drain
Current and Temperature.
Figure 5. Transfer Characteristics.
Figure 6. Gate Threshold Variation with
Temperature.
-4
-3.5
-3
-2.5
-2
-1.5
-1
-0.5
0
-20
-16
-12
-8
-4
0
V , GATE TO SOURCE VOLTAGE (V)
I
D
V = -10V
J
25°C
125°C
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NDH833N | N-Channel Enhancement Mode Field Effect Transistor |
| NDH834P | P-Channel Enhancement Mode Field Effect Transistor（-5.6A，-20V，0.035Ω）(P溝道增強型MOS場效應管（漏電流-5.6A, 漏源電壓-20V，導通電阻0.035Ω）) |
| NDH8436 | N-Channel Enhancement Mode Field Effect Transistor |
| NDH8447 | P-Channel Enhancement Mode Field Effect Transistor |
| NDH8502P | Dual P-Channel Enhancement Mode Field Effect Transistor（-2.2A，-30V，0.11Ω）(雙P溝道增強型場效應管（漏電流-2.2A, 漏源電壓-30V，導通電阻0.11Ω）) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NDH833N | 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NDH834P | 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NDH8436 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| NDH8447 | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| NDH8502P | 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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