參數(shù)資料
型號(hào)： NDH832P
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 小信號(hào)晶體管
英文描述： P-Channel Enhancement Mode Field Effect Transistor（-4.2A，-20V，0.06Ω）(P溝道增強(qiáng)型MOS場效應(yīng)管（漏電流-4.2A, 漏源電壓-20V，導(dǎo)通電阻0.06Ω）)
中文描述： 4200 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝： SUPERSOT-8
文件頁數(shù)： 6/8頁
文件大?。?/td> 82K
代理商： NDH832P
NDH832P Rev. B2
0
0.2
2oz COPPER MOUNTING PAD AREA (in )
0.4
0.6
0.8
2
1
0
0.5
1
1.5
2
2.5
S
1c
1b
1a
4.5"x5" FR-4 Board
T = 25 C
Still Air
o
0
0.2
2oz COPPER MOUNTING PAD AREA (in )
0.4
0.6
0.8
2
1
2
2.5
3
3.5
4
4.5
5
-
1c
1b
1a
4.5"x5" FR-4 Board
T = 25 C
Still Air
V = -4.5V
o
D
Figure 13. Maximum Steady-State Drain
Current versus Copper Mounting Pad
Area.
Figure 12. SOT-8 Maximum Steady-State Power
Dissipation versus Copper Mounting Pad
Area.
0.1
0.2
0.5
1
2
5
10
20
30
0.01
0.03
0.1
0.3
1
3
10
30
- V , DRAIN-SOURCE VOLTAGE (V)
-
D
RDS(ON) LIMIT
100ms
10ms
1s
10s
DC
100us
V = -4.5V
SINGLE PULSE
R = See Note 1c
T = 25°C
Figure 14. Maximum Safe Operating Area.
Typical Thermal Characteristics
0.0001
0.001
0.01
0.1
t , TIME (sec)
1
10
100
300
0.01
0.02
0.03
0.05
0.1
0.2
0.3
0.5
1
T
Single Pulse
D = 0.5
0.1
0.05
0.02
0.01
0.2
Duty Cycle, D = t / t
2
R (t) = r(t) * R
R = See Note 1c
T - T = P * R (t)
P(pk)
t
1
t
2
r
Figure 15. Transient Thermal Response Curve
.
Note: Thermal characterization performed using the conditions described in note 1c. Transient thermal response will change
depending on the circuit board design.
相關(guān)PDF資料
PDF描述
NDH833N N-Channel Enhancement Mode Field Effect Transistor
NDH834P P-Channel Enhancement Mode Field Effect Transistor（-5.6A，-20V，0.035Ω）(P溝道增強(qiáng)型MOS場效應(yīng)管（漏電流-5.6A, 漏源電壓-20V，導(dǎo)通電阻0.035Ω）)
NDH8436 N-Channel Enhancement Mode Field Effect Transistor
NDH8447 P-Channel Enhancement Mode Field Effect Transistor
NDH8502P Dual P-Channel Enhancement Mode Field Effect Transistor（-2.2A，-30V，0.11Ω）(雙P溝道增強(qiáng)型場效應(yīng)管（漏電流-2.2A, 漏源電壓-30V，導(dǎo)通電阻0.11Ω）)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NDH833N 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDH834P 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDH8436 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Enhancement Mode Field Effect Transistor
NDH8447 制造商:Fairchild Semiconductor Corporation 功能描述:
NDH8502P 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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