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參數(shù)資料
| 型號： | NDH832P |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | P-Channel Enhancement Mode Field Effect Transistor（-4.2A，-20V，0.06Ω）(P溝道增強型MOS場效應管（漏電流-4.2A, 漏源電壓-20V，導通電阻0.06Ω）) |
| 中文描述： | 4200 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SUPERSOT-8 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 82K |
| 代理商： | NDH832P |
Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
S
V
SD
Maximum Continuous Drain-Source Diode Forward Current
-1.5
A
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= -1.5 A
(Note 2)
-0.75
-1.2
V
Notes:
1. R
θ
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R
θ
JC
is guaranteed by
design while R
θ
CA
is determined by the user's board design.
P
D
(
t
) =
T
J
T
A
R
θ
JA
(
t
)
=
T
J
T
A
R
θ
JC
+
R
θ
CA
(
t
)
=
I
D
2
(
t
) ×
R
DS
(
ON
)
T
J
Typical R
θ
JA
using the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment:
a. 70
o
C/W when mounted on a 1 in
2
pad of 2oz cpper.
b. 125
o
C/W when mounted on a 0.026 in
2
pad of 2oz copper.
c. 135
o
C/W when mounted on a 0.005 in
2
pad of 2oz copper.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300μs, Duty Cycle < 2.0%.
NDH832P Rev. B2
1a
1b
1c
相關PDF資料 |
PDF描述 |
|---|---|
| NDH833N | N-Channel Enhancement Mode Field Effect Transistor |
| NDH834P | P-Channel Enhancement Mode Field Effect Transistor（-5.6A，-20V，0.035Ω）(P溝道增強型MOS場效應管（漏電流-5.6A, 漏源電壓-20V，導通電阻0.035Ω）) |
| NDH8436 | N-Channel Enhancement Mode Field Effect Transistor |
| NDH8447 | P-Channel Enhancement Mode Field Effect Transistor |
| NDH8502P | Dual P-Channel Enhancement Mode Field Effect Transistor（-2.2A，-30V，0.11Ω）(雙P溝道增強型場效應管（漏電流-2.2A, 漏源電壓-30V，導通電阻0.11Ω）) |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| NDH833N | 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NDH834P | 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NDH8436 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| NDH8447 | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| NDH8502P | 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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