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參數(shù)資料
| 型號： | NDH8301N |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Dual N-Channel Enhancement Mode Field Effect Transistor（3A，20V，0.06Ω）(雙N溝道增強型場效應管（漏電流3A, 漏源電壓20V，導通電阻0.06Ω）) |
| 中文描述： | 3000 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SUPERSOT-8 |
| 文件頁數(shù)： | 1/10頁 |
| 文件大?。?/td> | 211K |
| 代理商： | NDH8301N |
December 1996
NDH8301N
Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
____________________________________________________________________________________________
Absolute Maximum Ratings
T
A
= 25°C unless otherwise note
Symbol
Parameter
NDH8301N
Units
V
DSS
Drain-Source Voltage
20
V
V
GSS
Gate-Source Voltage
8
V
I
D
Drain Current - Continuous
(Note 1)
3
A
- Pulsed
15
P
D
T
J
,T
STG
Maximum Power Dissipation
(Note 1 )
0.8
W
Operating and Storage Temperature Range
-55 to 150
°C
THERMAL CHARACTERISTICS
R
θ
JA
R
θ
JC
Thermal Resistance, Junction-to-Ambient
(Note 1)
156
°C/W
Thermal Resistance, Junction-to-Case
(Note 1)
40
°C/W
NDH8301N Rev.E
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high cell
density, DMOS technology. This very high density process is
especially tailored to minimize on-state resistance. These
devices are particularly suited for low voltage applications such
as notebook computer power management, and other battery
powered circuits where fast switching, and low in-line power
loss are needed in a very small outline surface mount package.
3 A, 20 V. R
DS(ON)
= 0.06
@ V
GS
= 4.5 V
R
DS(ON)
= 0.075
@ V
GS
= 2.7 V.
Proprietary SuperSOT
TM
-8 package design using copper
lead frame for superior thermal and electrical capabilities.
High density cell design for extremely low R
DS(ON)
.
Exceptional on-resistance and maximum DC current
capability.
1
5
6
7
8
4
3
2
1997 Fairchild Semiconductor Corporation
相關PDF資料 |
PDF描述 |
|---|---|
| NDH8303N | N-Channel Enhancement Mode Field Effect Transistor（3.8A，20V，0.035Ω）(N溝道增強型MOS場效應管（漏電流3.8A, 漏源電壓20V，導通電阻0.035Ω）) |
| NDH8304 | Dual P-Channel Enhancement Mode Field Effect Transistor |
| NDH8304P | Dual P-Channel Enhancement Mode Field Effect Transistor（-2.7A，-20V，0.07Ω）(雙P溝道增強型場效應管（漏電流-2.7A, 漏源電壓-20V，導通電阻0.07Ω）) |
| NDH831N | N-Channel Enhancement Mode Field Effect Transistor（5.8A，20V，0.03Ω）(N溝道增強型MOS場效應管（漏電流5.8A, 漏源電壓20V，導通電阻0.03Ω）) |
| NDH8320C | Dual N & P-Channel Enhancement Mode Field Effect Transistor(雙N溝道和P溝道增強型場效應管(N溝道：漏電流3A, 漏源電壓20V，導通電阻0.06Ω；P溝道：漏電流-2A, 漏源電壓-20V，導通電阻0.13Ω）) |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| NDH8302P | 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NDH8303N | 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NDH8304 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual P-Channel Enhancement Mode Field Effect Transistor |
| NDH8304P | 功能描述:MOSFET Dual P-Ch FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NDH8304P | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET DUAL PP SUPERSOT-8 |
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