參數(shù)資料
型號(hào)： NDH8301N
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 小信號(hào)晶體管
英文描述： Dual N-Channel Enhancement Mode Field Effect Transistor（3A，20V，0.06Ω）(雙N溝道增強(qiáng)型場(chǎng)效應(yīng)管（漏電流3A, 漏源電壓20V，導(dǎo)通電阻0.06Ω）)
中文描述： 3000 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝： SUPERSOT-8
文件頁(yè)數(shù)： 2/10頁(yè)
文件大?。?/td> 211K
代理商： NDH8301N
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
DSS
I
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250 μA
V
DS
= 16 V, V
GS
= 0 V
20
V
Zero Gate Voltage Drain Current
1
μA
T
J
= 55
o
C
10
μA
I
GSSF
I
GSSR
ON CHARACTERISTICS
(Note 2)
Gate - Body Leakage, Forward
V
GS
= 8 V, V
DS
= 0 V
V
GS
= -8 V, V
DS
= 0 V
100
nA
Gate - Body Leakage, Reverse
-100
nA
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250 μA
0.4
0.7
1
V
T
J
= 125
o
C
0.3
0.45
0.8
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
= 4.5 V, I
D
= 3 A
0.047
0.06
T
J
= 125
o
C
0.07
0.11
V
GS
= 2.7 V, I
D
= 2.6 A
V
GS
= 4.5 V, V
DS
= 5 V
V
GS
= 2.7 V, V
DS
= 5 V
V
DS
= 5 V, I
D
= 3 A
0.059
0.075
I
D(on)
On-State Drain Current
15
A
5
g
FS
DYNAMIC CHARACTERISTICS
Forward Transconductance
10
S
C
iss
C
oss
C
rss
SWITCHING CHARACTERISTICS
(Note 2)
Input Capacitance
V
= 10 V, V
GS
= 0 V,
f = 1.0 MHz
415
pF
Output Capacitance
220
pF
Reverse Transfer Capacitance
85
pF
t
D(on)
t
r
t
D(off)
t
f
Q
g
Q
gs
Q
gd
Turn - On Delay Time
V
DD
= 5 V, I
D
= 1 A,
V
GS
= 4.5 V, R
GEN
= 6
8
15
ns
Turn - On Rise Time
25
45
ns
Turn - Off Delay Time
30
55
ns
Turn - Off Fall Time
8
15
ns
Total Gate Charge
V
= 10 V,
I
D
= 3 A, V
GS
= 4.5 V
10
15
nC
Gate-Source Charge
0.9
nC
Gate-Drain Charge
3.5
nC
NDH8301N Rev.E
相關(guān)PDF資料
PDF描述
NDH8303N N-Channel Enhancement Mode Field Effect Transistor（3.8A，20V，0.035Ω）(N溝道增強(qiáng)型MOS場(chǎng)效應(yīng)管（漏電流3.8A, 漏源電壓20V，導(dǎo)通電阻0.035Ω）)
NDH8304 Dual P-Channel Enhancement Mode Field Effect Transistor
NDH8304P Dual P-Channel Enhancement Mode Field Effect Transistor（-2.7A，-20V，0.07Ω）(雙P溝道增強(qiáng)型場(chǎng)效應(yīng)管（漏電流-2.7A, 漏源電壓-20V，導(dǎo)通電阻0.07Ω）)
NDH831N N-Channel Enhancement Mode Field Effect Transistor（5.8A，20V，0.03Ω）(N溝道增強(qiáng)型MOS場(chǎng)效應(yīng)管（漏電流5.8A, 漏源電壓20V，導(dǎo)通電阻0.03Ω）)
NDH8320C Dual N & P-Channel Enhancement Mode Field Effect Transistor(雙N溝道和P溝道增強(qiáng)型場(chǎng)效應(yīng)管(N溝道：漏電流3A, 漏源電壓20V，導(dǎo)通電阻0.06Ω；P溝道：漏電流-2A, 漏源電壓-20V，導(dǎo)通電阻0.13Ω）)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NDH8302P 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDH8303N 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDH8304 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual P-Channel Enhancement Mode Field Effect Transistor
NDH8304P 功能描述:MOSFET Dual P-Ch FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDH8304P 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET DUAL PP SUPERSOT-8
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