參數(shù)資料
型號： NDS0610
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 小信號晶體管
英文描述： P-Channel Enhancement Mode Field Effect Transistor（-0.12A，-60V，10Ω）(P溝道增強(qiáng)型MOS場效應(yīng)管（漏電流-0.12A, 漏源電壓-60V，導(dǎo)通電阻10Ω）)
中文描述： 120 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝： SOT-23, 3 PIN
文件頁數(shù)： 11/13頁
文件大小： 553K
代理商： NDS0610
Dimensions are in millimeter
Pkg type
A0
B0
W
D0
D1
E1
E2
F
P1
P0
K0
T
Wc
Tc
SOT-23
(8mm)
3.15
+/-0.10
2.77
+/-0.10
8.0
+/-0.3
1.55
+/-0.05
1.125
+/-0.125
1.75
+/-0.10
6.25
min
3.50
+/-0.05
4.0
+/-0.1
4.0
+/-0.1
1.30
+/-0.10
0.228
+/-0.013
5.2
+/-0.3
0.06
+/-0.02
Dimensions are in inches and millimeters
Tape Size
Reel
Option
Dim A
Dim B
Dim C
Dim D
Dim N
Dim W1
Dim W2
Dim W3 (LSL-USL)
8mm
7" Dia
7.00
177.8
0.059
1.5
512 +0.020/-0.008
13 +0.5/-0.2
0.795
20.2
2.165
55
0.331 +0.059/-0.000
8.4 +1.5/0
0.567
14.4
0.311 – 0.429
7.9 – 10.9
8mm
13" Dia
13.00
0.059
1.5
512 +0.020/-0.008
0.795
4.00
0.331 +0.059/-0.000
0.567
0.311 – 0.429
See detail AA
Dim A
max
13" Diameter Option
7" Diameter Option
Dim A
Max
See detail AA
W3
W2 max Measured at Hub
W1 Measured at Hub
Dim N
Dim D
min
Dim C
B Min
DETAIL AA
Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481
rotational and lateral movement requirements (see sketches A, B, and C).
20 deg maximum component rotation
0.5mm
maximum
0.5mm
maximum
Sketch C (Top View)
Component lateral movement
Typical
component
cavity
center line
20 deg maximum
Typical
component
center line
B0
A0
Sketch B (Top View)
Component Rotation
Sketch A (Side or Front Sectional View)
Component Rotation
User Direction of Feed
SOT-23Embossed Carrier Tape
Configuration:
Figure 3.0
SOT-23 Reel Configuration:
Figure 4.0
P1
A0
D1
F
W
E1
E2
Tc
Wc
K0
T
B0
D0
P0
P2
SOT-23 Tape and Reel Data and Package Dimensions, continued
September 1999, Rev. C
相關(guān)PDF資料
PDF描述
NDH8301N Dual N-Channel Enhancement Mode Field Effect Transistor（3A，20V，0.06Ω）(雙N溝道增強(qiáng)型場效應(yīng)管（漏電流3A, 漏源電壓20V，導(dǎo)通電阻0.06Ω）)
NDH8303N N-Channel Enhancement Mode Field Effect Transistor（3.8A，20V，0.035Ω）(N溝道增強(qiáng)型MOS場效應(yīng)管（漏電流3.8A, 漏源電壓20V，導(dǎo)通電阻0.035Ω）)
NDH8304 Dual P-Channel Enhancement Mode Field Effect Transistor
NDH8304P Dual P-Channel Enhancement Mode Field Effect Transistor（-2.7A，-20V，0.07Ω）(雙P溝道增強(qiáng)型場效應(yīng)管（漏電流-2.7A, 漏源電壓-20V，導(dǎo)通電阻0.07Ω）)
NDH831N N-Channel Enhancement Mode Field Effect Transistor（5.8A，20V，0.03Ω）(N溝道增強(qiáng)型MOS場效應(yīng)管（漏電流5.8A, 漏源電壓20V，導(dǎo)通電阻0.03Ω）)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NDS0610 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P SOT-23
NDS0610_D87Z 功能描述:MOSFET P-Channel FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDS0610_NL 功能描述:MOSFET 60V 10 OHM P-CH MOSFETSOT-23 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDS0610_Q 功能描述:MOSFET P-Channel FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDS0610X 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P-Channel 60V 0.12A SOT23
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