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參數(shù)資料
| 型號： | NDH8504P |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Dual P-Channel Enhancement Mode Field Effect Transistor（-2.7A，-30V，0.07Ω）(雙P溝道增強型場效應管（漏電流-2.7A, 漏源電壓-30V，導通電阻0.07Ω）) |
| 中文描述： | 2700 mA, 30 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SUPERSOT-8 |
| 文件頁數(shù)： | 5/10頁 |
| 文件大?。?/td> | 210K |
| 代理商： | NDH8504P |
NDH8504P Rev.C
Figure 7. Breakdown Voltage Variation with
Temperature.
Figure 8. Body Diode Forward Voltage Variation
with Current and Temperature
.
Figure 9. Capacitance Characteristics.
Figure 10. Gate Charge Characteristics.
Typical Electrical Characteristics
Figure 11. Switching Test Circuit
.
Figure 12. Switching Waveforms.
-50
-25
0
T , JUNCTION TEMPERATURE (°C)
25
50
75
100
125
150
0.94
0.96
0.98
1
1.02
1.04
1.06
1.08
1.1
D
I = -250μA
B
D
0.1
0.2
0.5
1
2
5
10
20
30
50
100
200
400
600
1000
1500
-VDS
C
C s
f = 1 MHz
V = 0 V
C ss
C s
0
4
8
12
16
20
0
2
4
6
8
10
Q , GATE CHARGE (nC)
-
V =-5V
I = -2.7A
-10V
G
-15V
0.2
0.4
-V , BODY DIODE FORWARD VOLTAGE (V)
0.6
0.8
1
1.2
0.0001
0.001
0.01
0.1
0.5
1
3
10
-
TJ
25°C
-55°C
V = 0V
S
D
S
-V
DD
R
L
V
OUT
V
GS
DUT
V
IN
R
GEN
G
10%
50%
90%
10%
90%
90%
50%
V
IN
V
OUT
on
off
d(off)
f
r
d(on)
t
t
t
t
t
t
INVERTED
10%
PULSE WIDTH
相關PDF資料 |
PDF描述 |
|---|---|
| NDH8520C | Dual N & P-Channel Enhancement Mode Field Effect Transistor(雙N溝道和P溝道增強型場效應管(N溝道：漏電流2.8A, 漏源電壓30V，導通電阻0.07Ω；P溝道：漏電流-2.2A, 漏源電壓-30V，導通電阻0.11Ω）) |
| NDH8521C | Dual N & P-Channel Enhancement Mode Field Effect Transistor(雙N溝道和P溝道增強型場效應管(N溝道：漏電流3.8A, 漏源電壓30V，導通電阻0.033Ω；P溝道：漏電流-2.7A, 漏源電壓-30V，導通電阻0.07Ω）) |
| NDH853N | N-Channel Enhancement Mode Field Effect Transistor |
| NDH854P | P-Channel Enhancement Mode Field Effect Transistor |
| NDHA500APAE1 | Aquamarine Laser Diode |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| NDH8505N | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 30V V(BR)DSS | 1.6A I(D) | SO |
| NDH8507N | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 30V V(BR)DSS | 2A I(D) | SO |
| NDH8508P | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | MATCHED PAIR | P-CHANNEL | 30V V(BR)DSS | 1.4A I(D) | SO |
| NDH8520C | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual N & P-Channel Enhancement Mode Field Effect Transistor |
| NDH8521C | 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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