參數(shù)資料
型號(hào)： NDH8504P
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 小信號(hào)晶體管
英文描述： Dual P-Channel Enhancement Mode Field Effect Transistor（-2.7A，-30V，0.07Ω）(雙P溝道增強(qiáng)型場(chǎng)效應(yīng)管（漏電流-2.7A, 漏源電壓-30V，導(dǎo)通電阻0.07Ω）)
中文描述： 2700 mA, 30 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝： SUPERSOT-8
文件頁(yè)數(shù)： 2/10頁(yè)
文件大?。?/td> 210K
代理商： NDH8504P
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
DSS
I
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= -250 μA
V
DS
= -24V, V
GS
= 0 V
-30
V
Zero Gate Voltage Drain Current
-1
μA
T
J
= 55°C
-10
μA
I
GSSF
I
GSSR
ON CHARACTERISTICS
(Note 2)
Gate - Body Leakage, Forward
V
GS
= 20 V, V
DS
= 0 V
V
GS
= -20 V, V
DS
= 0 V
100
nA
Gate - Body Leakage, Reverse
-100
nA
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= - 250 μA
-1
-1.6
-3
V
T
J
= 125°C
-0.8
-1.2
-2.4
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
= -10 V, I
D
= -2.7 A
0.062
0.07
T
J
= 125°C
0.088
0.125
V
GS
= -4.5 V, I
D
= -2.1 A
V
GS
= -10 V, V
DS
= -5 V
V
GS
= -4.5 V, V
DS
= -5 V
V
DS
= -10 V, I
D
= -2.7 A
0.102
0.115
I
D(on)
On-State Drain Current
-8
A
-3
g
FS
DYNAMIC CHARACTERISTICS
Forward Transconductance
5.5
S
C
iss
C
oss
C
rss
SWITCHING CHARACTERISTICS
(Note 2)
Input Capacitance
V
= -15 V, V
GS
= 0 V,
f = 1.0 MHz
560
pF
Output Capacitance
340
pF
Reverse Transfer Capacitance
130
pF
t
D(on)
t
r
t
D(off)
t
f
Q
g
Q
gs
Q
gd
Turn - On Delay Time
V
DD
= -10 V, I
D
= -1 A,
V
GS
= -10 V, R
GEN
= 6
13
25
ns
Turn - On Rise Time
16
30
ns
Turn - Off Delay Time
35
70
ns
Turn - Off Fall Time
40
80
ns
Total Gate Charge
V
= -10 V,
I
D
= -2.7 A, V
GS
= -10 V
19
27
nC
Gate-Source Charge
3.8
nC
Gate-Drain Charge
4.7
nC
NDH8504P Rev.C
相關(guān)PDF資料
PDF描述
NDH8520C Dual N & P-Channel Enhancement Mode Field Effect Transistor(雙N溝道和P溝道增強(qiáng)型場(chǎng)效應(yīng)管(N溝道：漏電流2.8A, 漏源電壓30V，導(dǎo)通電阻0.07Ω；P溝道：漏電流-2.2A, 漏源電壓-30V，導(dǎo)通電阻0.11Ω）)
NDH8521C Dual N & P-Channel Enhancement Mode Field Effect Transistor(雙N溝道和P溝道增強(qiáng)型場(chǎng)效應(yīng)管(N溝道：漏電流3.8A, 漏源電壓30V，導(dǎo)通電阻0.033Ω；P溝道：漏電流-2.7A, 漏源電壓-30V，導(dǎo)通電阻0.07Ω）)
NDH853N N-Channel Enhancement Mode Field Effect Transistor
NDH854P P-Channel Enhancement Mode Field Effect Transistor
NDHA500APAE1 Aquamarine Laser Diode
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NDH8505N 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 30V V(BR)DSS | 1.6A I(D) | SO
NDH8507N 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 30V V(BR)DSS | 2A I(D) | SO
NDH8508P 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | MATCHED PAIR | P-CHANNEL | 30V V(BR)DSS | 1.4A I(D) | SO
NDH8520C 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual N & P-Channel Enhancement Mode Field Effect Transistor
NDH8521C 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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