參數(shù)資料
型號: NDH8504P
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 小信號晶體管
英文描述: Dual P-Channel Enhancement Mode Field Effect Transistor(-2.7A,-30V,0.07Ω)(雙P溝道增強型場效應(yīng)管(漏電流-2.7A, 漏源電壓-30V,導(dǎo)通電阻0.07Ω))
中文描述: 2700 mA, 30 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝: SUPERSOT-8
文件頁數(shù): 4/10頁
文件大?。?/td> 210K
代理商: NDH8504P
NDH8504P Rev.C
Typical Electrical Characteristics
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Gate
Voltage and Drain Current.
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with Drain
Current and Temperature.
Figure 5. Transfer Characteristics.
Figure 6. Gate Threshold Variation with
Temperature.
-3
-2.5
-2
-1.5
-1
-0.5
0
-10
-8
-6
-4
-2
0
V , DRAIN-SOURCE VOLTAGE (V)
I
D
-3.5
-4.5
-3.0
-5.0
-6.0
V = -10V
-4.0
-10
-8
-6
-4
-2
0
0.5
1
1.5
2
2.5
3
I , DRAIN CURRENT (A)
D
R
D
-7.0
-4.5
-4.0
-5.0
-6.0
-10
V = -3.5V
GS
-5
-4
-3
-2
-1
-10
-8
-6
-4
-2
0
V , GATE TO SOURCE VOLTAGE (V)
I
D
V = -10V
TJ
125°C
25°C
-50
-25
0
T , JUNCTION TEMPERATURE (°C)
25
50
75
100
125
150
0.6
0.7
0.8
0.9
1
1.1
1.2
G
V
G
I = -250μA
V = V
GS
-50
-25
0
T , JUNCTION TEMPERATURE (°C)
25
50
75
100
125
150
0.6
0.8
1
1.2
1.4
1.6
D
R
D
V = -10V
I = -2.7A
-10
-8
-6
-4
-2
0
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
I , DRAIN CURRENT (A)
D
R
D
V = -10V
GS
J
25°C
-55°C
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