參數(shù)資料
型號： NDF0610
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 小信號晶體管
英文描述： P-Channel Enhancement Mode Field Effect Transistor（-0.18A，-60V，10Ω）(P溝道增強(qiáng)型MOS場效應(yīng)管（漏電流-0.18A, 漏源電壓-60V，導(dǎo)通電阻10Ω）)
中文描述： 180 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
文件頁數(shù)： 6/13頁
文件大?。?/td> 553K
代理商： NDF0610
TO-92 Tape and Reel Data and Package Dimensions
September 1999, Rev. B
TO-92 Packaging
Configuration:
Figure 1.0
AMMO PACK OPTION
See Fig 3.0 for 2 Ammo
Pack Options
2000 units per
Estd option
FSCINT Label
530mm x 130mm x
Intermediate box
83mm
per
intermediate box
FSCINT Label
114mm x 102mm x 51mm
Immediate Box
Anti-static
Bubble Sheets
(TO-92) BULK PACKING INFORMATION
EOL
DESCRIPTION
LEADCLIP
QUANTITY
J18Z
TO-18 OPTION STD
NO LEAD CLIP
2.0 K / BOX
J05Z
TO-5 OPTION STD
NO LEAD CLIP
1.5 K / BOX
CODE
TO-92 STANDARD
STRAIGHT
NO LEADCLIP
2.0 K / BOX
BULK OPTION
See Bulk Packing
Information table
375mm x 267mm x 375mm
Intermediate Box
FSCINT
Label
Customized
Label
333mm x 231mm x 183mm
Intermediate Box
FSCINT
Label
Customized
Label
TO-92 TNR/AMMO PACKING INFROMATION
Packing
Style
Quantity
EOL code
Reel
A
2,000
D26Z
E
2,000
D27Z
Ammo
M
2,000
D74Z
P
2,000
D75Z
Unit weight = 0.22 gm
Reel weight with components = 1.04 kg
Ammo weight with components = 1.02 kg
Max quantity per intermediate box = 10,000 units
F63TNR
Label
5Intermediate Box
Customized
Label
327mm x 158mm x 135mm
Immediate Box
LOT:
CBVK741B019
NSID:
PN2222N
D/C1:
D9842
SPEC REV:
B2
QA REV:
SPEC:
QTY:
10000
FAIRCHILD SEMICONDUCTOR CORPORATION
HTB:B
(FSCINT)
F63TNR
Label
Customized
Label
5 Reels per
Intermediate Box
TAPE and REEL OPTION
See Fig 2.0 for various
Reeling Styles
LOT: CBVK741B019
FSID: PN222N
D/C1: D9842 QTY1:
SPEC REN/F: F (F63TNR)3
SPEC:
QTY: 2000
QTY2:
F63TNR Label sample
FSCINT Label sample
C
Label
5 EO70 boxes per
intermediate Box
ustomized
相關(guān)PDF資料
PDF描述
NDS0610 P-Channel Enhancement Mode Field Effect Transistor（-0.12A，-60V，10Ω）(P溝道增強(qiáng)型MOS場效應(yīng)管（漏電流-0.12A, 漏源電壓-60V，導(dǎo)通電阻10Ω）)
NDH8301N Dual N-Channel Enhancement Mode Field Effect Transistor（3A，20V，0.06Ω）(雙N溝道增強(qiáng)型場效應(yīng)管（漏電流3A, 漏源電壓20V，導(dǎo)通電阻0.06Ω）)
NDH8303N N-Channel Enhancement Mode Field Effect Transistor（3.8A，20V，0.035Ω）(N溝道增強(qiáng)型MOS場效應(yīng)管（漏電流3.8A, 漏源電壓20V，導(dǎo)通電阻0.035Ω）)
NDH8304 Dual P-Channel Enhancement Mode Field Effect Transistor
NDH8304P Dual P-Channel Enhancement Mode Field Effect Transistor（-2.7A，-20V，0.07Ω）(雙P溝道增強(qiáng)型場效應(yīng)管（漏電流-2.7A, 漏源電壓-20V，導(dǎo)通電阻0.07Ω）)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NDF06N60Z 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:NDP06N60Z
NDF06N60ZG 功能描述:MOSFET NFET TO220FP 600V 6A .98R RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDF06N60ZH 功能描述:MOSFET NFET 600V 6A 980 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDF06N62Z 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:N-Channel Power MOSFET 620 V, 0.98 ,
NDF06N62ZG 功能描述:MOSFET Single N-Ch 620V 3.8A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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