參數(shù)資料
型號(hào): NDF0610
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 小信號(hào)晶體管
英文描述: P-Channel Enhancement Mode Field Effect Transistor(-0.18A,-60V,10Ω)(P溝道增強(qiáng)型MOS場效應(yīng)管(漏電流-0.18A, 漏源電壓-60V,導(dǎo)通電阻10Ω))
中文描述: 180 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
文件頁數(shù): 4/13頁
文件大小: 553K
代理商: NDF0610
NDS0610.SAM
-50
-25
0
25
50
75
100
125
150
0.9
0.95
1
1.05
1.1
1.15
T , JUNCTION TEMPERATURE (°C)
D
I = -10μA
B
S
D
S
0.6
0.8
1
1.2
1.4
1.6
1.8
0.1
0.2
0.3
0.5
1
1.5
-V , BODY DIODE FORWARD VOLTAGE (V)
-
V = 0V
TJ
25
-55
S
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
-10
-8
-6
-4
-2
0
Q , GATE CHARGE (nC)
V
G
-48
V = -12V
I = -0.5A
-24
0.1
0.2
0.5
-V , DRAIN TO SOURCE VOLTAGE (V)
1
2
5
10
20
30
60
2
3
5
10
20
30
50
70
C
C ss
f = 1 MHz
V = 0V
C ss
C ss
-1.4
-1.2
-1
-0.8
-0.6
-0.4
-0.2
0
0
0.1
0.2
0.3
0.4
I , DRAIN CURRENT (A)
g
TJ
25
F
V = -10V
125
Figure 7. Breakdown Voltage Variation with
Temperature
Figure 8. Body Diode Forward Voltage
Variation with Current and Temperature
Figure 9. Capacitance Characteristics
Figure 10. Gate Charge Characteristics
Figure 11. Transconductance Variation with Drain
Current and Temperature
Typical Electrical Characteristics
(continued)
相關(guān)PDF資料
PDF描述
NDS0610 P-Channel Enhancement Mode Field Effect Transistor(-0.12A,-60V,10Ω)(P溝道增強(qiáng)型MOS場效應(yīng)管(漏電流-0.12A, 漏源電壓-60V,導(dǎo)通電阻10Ω))
NDH8301N Dual N-Channel Enhancement Mode Field Effect Transistor(3A,20V,0.06Ω)(雙N溝道增強(qiáng)型場效應(yīng)管(漏電流3A, 漏源電壓20V,導(dǎo)通電阻0.06Ω))
NDH8303N N-Channel Enhancement Mode Field Effect Transistor(3.8A,20V,0.035Ω)(N溝道增強(qiáng)型MOS場效應(yīng)管(漏電流3.8A, 漏源電壓20V,導(dǎo)通電阻0.035Ω))
NDH8304 Dual P-Channel Enhancement Mode Field Effect Transistor
NDH8304P Dual P-Channel Enhancement Mode Field Effect Transistor(-2.7A,-20V,0.07Ω)(雙P溝道增強(qiáng)型場效應(yīng)管(漏電流-2.7A, 漏源電壓-20V,導(dǎo)通電阻0.07Ω))
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