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參數(shù)資料
| 型號： | NDF0610 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | P-Channel Enhancement Mode Field Effect Transistor（-0.18A，-60V，10Ω）(P溝道增強型MOS場效應管（漏電流-0.18A, 漏源電壓-60V，導通電阻10Ω）) |
| 中文描述： | 180 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 |
| 文件頁數(shù)： | 1/13頁 |
| 文件大小： | 553K |
| 代理商： | NDF0610 |
April 1995
NDF0610 / NDS0610
P-Channel Enhancement Mode Field Effect Transistor
General Description
Features
____________________________________________________________________________________________
NDF0610
Absolute Maximum Ratings
Symbol
Parameter
T
A
= 25°C unless otherwise noted
NDF0610
NDS0610
Units
V
DSS
V
DGR
Drain-Source Voltage
-60
V
Drain-Gate Voltage (R
GS
< 1 M
)
Gate-Source Voltage - Continuous
-60
V
V
GSS
±20
V
- Nonrepetitive (t
P
< 50 μs)
±30
V
I
D
Drain Current - Continuous
-0.18
-0.12
A
- Pulsed
-1
P
D
Maximum Power Dissipation T
A
= 25
°
C
Derate above 25
°
C
0.8
0.36
W
5
2.9
mW/
o
C
T
J
,T
STG
T
L
Operating and Storage Temperature Range
-55 to 150
°C
Maximum lead temperature for soldering
purposes, 1/16" from case for 10 seconds
300
°C
THERMAL CHARACTERISTICS
R
θ
JA
Thermal Resistance, Junction-to-Ambient
200
350
°C/W
NDS0610.SAM
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high
cell density, DMOS technology. This very high density
process has been designed to minimize on-state resistance,
provide rugged and reliable performance and fast switching.
They can be used, with a minimum of effort, in most
applications requiring up to 180mA DC and can deliver
pulsed currents up to 1A. This product is particularly suited
to low voltage applications requiring a low current high side
switch.
-0.18 and -0.12A, -60V. R
DS(ON)
= 10
Voltage controlled p-channel small signal switch
High density cell design for low R
DS(ON)
TO-92 and SOT-23 packages for both through hole and
surface mount applications
High saturation current
G
D
S
SOT-23
NDS0610
S
D
G
1998 Fairchild Semiconductor Corporation
S
G
D
TO-92
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| NDH8304 | Dual P-Channel Enhancement Mode Field Effect Transistor |
| NDH8304P | Dual P-Channel Enhancement Mode Field Effect Transistor（-2.7A，-20V，0.07Ω）(雙P溝道增強型場效應管（漏電流-2.7A, 漏源電壓-20V，導通電阻0.07Ω）) |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| NDF06N60Z | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:NDP06N60Z |
| NDF06N60ZG | 功能描述:MOSFET NFET TO220FP 600V 6A .98R RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NDF06N60ZH | 功能描述:MOSFET NFET 600V 6A 980 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NDF06N62Z | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:N-Channel Power MOSFET 620 V, 0.98 , |
| NDF06N62ZG | 功能描述:MOSFET Single N-Ch 620V 3.8A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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