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參數(shù)資料
| 型號(hào)： | NDC7003P |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | Dual P-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | 340 mA, 60 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SUPERSOT-6 |
| 文件頁(yè)數(shù)： | 6/10頁(yè) |
| 文件大?。?/td> | 259K |
| 代理商： | NDC7003P |
Typical Thermal Characteristics
0
0.2
2oz COPPER MOUNTING PAD AREA (in )
0.4
0.6
0.8
2
1
0.6
0.7
0.8
0.9
1
1.1
1.2
S
1c
1b
1a
4.5"x5" FR-4 Board
T = 25 C
Still Air
o
Figure 13. Maximum Steady-State Drain
Current versus Copper Mounting Pad
Area.
Figure 12. SOT-6 Dual Package Maximum
Steady-State Power Dissipation versus
Copper Mounting Pad Area.
0
0.025
2oz COPPER MOUNTING PAD AREA (in )
0.05
0.075
0.1
2
0.125
0.2
0.25
0.3
0.35
0.4
-
D
1c
1b
1a
4.5"x5" FR-4 Board
o
T = 25 C
Still Air
V = -10V
Figure 14. Maximum Safe Operating Area
1
2
5
10
20
50
70
0.01
0.02
0.05
0.1
0.2
0.5
1
2
3
-V , DRAIN-SOURCE VOLTAGE (V)
-
D
RDS(ON) LIMIT
V = -10V
SINGLE PULSE
R = See Note 1c
T = 25°C
JA
1s
DC
100ms
100us
1ms
10ms
0.0001
0.001
0.01
0.1
t , TIME (sec)
1
10
100
300
0.01
0.02
0.05
0.1
0.2
0.5
1
T
Single Pulse
D = 0.5
0.1
0.05
0.02
0.01
0.2
r
Duty Cycle, D = t / t
2
R (t) = r(t) * R
R = See Note 1c
T - T = P * R (t)
P(pk)
t
1
t
2
Figure 15. Transient Thermal Response Curve
.
Note: Thermal characterization performed using the conditions described in note 1c. Transient thermal response will change
depending on the circuit board design.
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PDF描述 |
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| NDC | ISOLATED RESISTOR NETWORK |
| NDF0610 | P-Channel Enhancement Mode Field Effect Transistor（-0.18A，-60V，10Ω）(P溝道增強(qiáng)型MOS場(chǎng)效應(yīng)管（漏電流-0.18A, 漏源電壓-60V，導(dǎo)通電阻10Ω）) |
| NDS0610 | P-Channel Enhancement Mode Field Effect Transistor（-0.12A，-60V，10Ω）(P溝道增強(qiáng)型MOS場(chǎng)效應(yīng)管（漏電流-0.12A, 漏源電壓-60V，導(dǎo)通電阻10Ω）) |
| NDH8301N | Dual N-Channel Enhancement Mode Field Effect Transistor（3A，20V，0.06Ω）(雙N溝道增強(qiáng)型場(chǎng)效應(yīng)管（漏電流3A, 漏源電壓20V，導(dǎo)通電阻0.06Ω）) |
| NDH8303N | N-Channel Enhancement Mode Field Effect Transistor（3.8A，20V，0.035Ω）(N溝道增強(qiáng)型MOS場(chǎng)效應(yīng)管（漏電流3.8A, 漏源電壓20V，導(dǎo)通電阻0.035Ω）) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NDC7003P_Q | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| NDC-L | 制造商:RRE 制造商全稱:RRE 功能描述:Standard Magnets |
| NDC-M | 制造商:RRE 制造商全稱:RRE 功能描述:Standard Magnets |
| NDC-S | 制造商:RRE 制造商全稱:RRE 功能描述:Standard Magnets |
| NDC-T | 制造商:RRE 制造商全稱:RRE 功能描述:Standard Magnets |
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