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參數(shù)資料
| 型號： | NDC7003P |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Dual P-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | 340 mA, 60 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SUPERSOT-6 |
| 文件頁數(shù)： | 2/10頁 |
| 文件大?。?/td> | 259K |
| 代理商： | NDC7003P |
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
DSS
I
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= -250 μA
V
DS
= -40 V, V
GS
= 0 V
-50
V
Zero Gate Voltage Drain Current
-1
μA
T
J
= 125°C
-500
I
GSSF
I
GSSR
ON CHARACTERISTICS
(Note 2)
Gate - Body Leakage, Forward
V
GS
= 20 V, V
DS
= 0 V
V
GS
= -20 V, V
DS
= 0 V
100
nA
Gate - Body Leakage, Reverse
-100
nA
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= -250 μ.A
-1
-2.5
-3.5
V
T
J
= 125°C
-0.8
-2.2
-3
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
= -10 V, I
D
= -0.34 A
2.5
5
T
J
= 125°C
4
10
V
GS
= -4.5 V, I
D
= -0.25 A
V
GS
= -10 V, V
DS
= -10 V
V
DS
= -10 V, I
D
= -0.34 A
5.3
7.5
I
D(on)
g
FS
DYNAMIC CHARACTERISTICS
C
iss
Input Capacitance
C
oss
C
rss
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
(Note 2)
On-State Drain Current
-1
A
Forward Transconductance
250
mS
V
= -25 V, V
GS
= 0 V,
f = 1.0 MHz
40
pF
Output Capacitance
13
pF
4
pF
t
D(on)
Turn - On Delay Time
V
DD
= -25 V, I
D
= -0.25 A,
V
GS
= -10 V, R
GEN
= 25
14
20
nS
t
r
t
D(off)
Turn - On Rise Time
6
20
Turn - Off Delay Time
13
20
t
f
Q
g
Q
gs
Q
gd
Turn - Off Fall Time
6
20
Total Gate Charge
V
= -25 V,
I
D
= -0.34 A, V
GS
= -10 V
1.3
nC
Gate-Source Charge
0.23
nC
Gate-Drain Charge
0.38
nC
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NDC | ISOLATED RESISTOR NETWORK |
| NDF0610 | P-Channel Enhancement Mode Field Effect Transistor（-0.18A，-60V，10Ω）(P溝道增強型MOS場效應(yīng)管（漏電流-0.18A, 漏源電壓-60V，導(dǎo)通電阻10Ω）) |
| NDS0610 | P-Channel Enhancement Mode Field Effect Transistor（-0.12A，-60V，10Ω）(P溝道增強型MOS場效應(yīng)管（漏電流-0.12A, 漏源電壓-60V，導(dǎo)通電阻10Ω）) |
| NDH8301N | Dual N-Channel Enhancement Mode Field Effect Transistor（3A，20V，0.06Ω）(雙N溝道增強型場效應(yīng)管（漏電流3A, 漏源電壓20V，導(dǎo)通電阻0.06Ω）) |
| NDH8303N | N-Channel Enhancement Mode Field Effect Transistor（3.8A，20V，0.035Ω）(N溝道增強型MOS場效應(yīng)管（漏電流3.8A, 漏源電壓20V，導(dǎo)通電阻0.035Ω）) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NDC7003P_Q | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| NDC-L | 制造商:RRE 制造商全稱:RRE 功能描述:Standard Magnets |
| NDC-M | 制造商:RRE 制造商全稱:RRE 功能描述:Standard Magnets |
| NDC-S | 制造商:RRE 制造商全稱:RRE 功能描述:Standard Magnets |
| NDC-T | 制造商:RRE 制造商全稱:RRE 功能描述:Standard Magnets |
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