- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄363239 > NDC7003P (FAIRCHILD SEMICONDUCTOR CORP) Dual P-Channel Enhancement Mode Field Effect Transistor PDF資料下載
參數(shù)資料
| 型號： | NDC7003P |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Dual P-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | 340 mA, 60 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SUPERSOT-6 |
| 文件頁數(shù)： | 4/10頁 |
| 文件大小： | 259K |
| 代理商： | NDC7003P |
-6
-5
-4
-3
-2
-1
0
-1
-0.8
-0.6
-0.4
-0.2
V , DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
I
-6.0
D
V = -10V
-9.0-8.0
-5.0
-4.0
-7.0
-3.5
-50
-25
0
T , JUNCTION TEMPERATURE (°C)
25
50
75
100
125
150
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
D
V = -10V
I = -0.34A
R
D
-50
-25
0
T , JUNCTION TEMPERATURE (°C)
25
50
75
100
125
150
0.8
0.85
0.9
0.95
1
1.05
1.1
G
I = -250μA
V = V
GS
V
t
-1
-0.8
-0.6
-0.4
-0.2
0.5
1
1.5
2
2.5
3
I , DRAIN CURRENT (A)
D
V =-4.5V
-7.0
R
D
-6.0
-5.0
-10
-9.0
-8.0
-1
-0.8
-0.6
-0.4
-0.2
0.5
1
1.5
2
2.5
I , DRAIN CURRENT (A)
D
R
D
V =-10 V
TJ
25°C
-55°C
Typical Electrical Characteristics
Figure 2. On-Resistance Variation with Gate
Voltage and Drain Current.
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with Drain
Current and Temperature.
Figure 5. Transfer Characteristics.
Figure 6. Gate Threshold Variation with
Temperature.
-8
-7
-6
-5
-4
-3
-2
-1
-1
-0.8
-0.6
-0.4
-0.2
V , GATE TO SOURCE VOLTAGE (V)
I
D
25°C
125°C
V =- 10V
J
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NDC | ISOLATED RESISTOR NETWORK |
| NDF0610 | P-Channel Enhancement Mode Field Effect Transistor（-0.18A，-60V，10Ω）(P溝道增強(qiáng)型MOS場效應(yīng)管（漏電流-0.18A, 漏源電壓-60V，導(dǎo)通電阻10Ω）) |
| NDS0610 | P-Channel Enhancement Mode Field Effect Transistor（-0.12A，-60V，10Ω）(P溝道增強(qiáng)型MOS場效應(yīng)管（漏電流-0.12A, 漏源電壓-60V，導(dǎo)通電阻10Ω）) |
| NDH8301N | Dual N-Channel Enhancement Mode Field Effect Transistor（3A，20V，0.06Ω）(雙N溝道增強(qiáng)型場效應(yīng)管（漏電流3A, 漏源電壓20V，導(dǎo)通電阻0.06Ω）) |
| NDH8303N | N-Channel Enhancement Mode Field Effect Transistor（3.8A，20V，0.035Ω）(N溝道增強(qiáng)型MOS場效應(yīng)管（漏電流3.8A, 漏源電壓20V，導(dǎo)通電阻0.035Ω）) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NDC7003P_Q | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| NDC-L | 制造商:RRE 制造商全稱:RRE 功能描述:Standard Magnets |
| NDC-M | 制造商:RRE 制造商全稱:RRE 功能描述:Standard Magnets |
| NDC-S | 制造商:RRE 制造商全稱:RRE 功能描述:Standard Magnets |
| NDC-T | 制造商:RRE 制造商全稱:RRE 功能描述:Standard Magnets |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。