參數(shù)資料
型號: NDC7003P
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 小信號晶體管
英文描述: Dual P-Channel Enhancement Mode Field Effect Transistor
中文描述: 340 mA, 60 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝: SUPERSOT-6
文件頁數(shù): 3/10頁
文件大小: 259K
代理商: NDC7003P
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
DRAIN-SOURCE DIODE CHARACTERISTICS
I
S
I
SM
V
SD
Maximum Continuous Source Current
-0.34
A
Maximum Pulse Source Current
(Note 2)
-1
A
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= -0.34 A
(Note 2)
-0.8
-1.2
V
Notes:
1. R
θ
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R
θ
JC
is guaranteed by
design while R
θ
CA
is determined by the user's board design.
P
D
(
t
) =
T
J
T
A
R
θ
J A
(
t
)
=
T
J
T
A
R
θ
J C
+
R
θ
CA
(
t
)
=
I
D
2
(
t
R
DS
(
ON
)
T
J
Typical R
θ
JA
for single device operation using the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment:
a. 130
o
C/W when mounted on a 0.125 in
2
pad of 2oz cpper.
b. 140
o
C/W when mounted on a 0.005 in
2
pad of 2oz cpper.
c. 180
o
C/W when mounted on a 0.0015 in
2
pad of 2oz cpper.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300μs, Duty Cycle < 2.0%.
1a
1b
1c
相關PDF資料
PDF描述
NDC ISOLATED RESISTOR NETWORK
NDF0610 P-Channel Enhancement Mode Field Effect Transistor(-0.18A,-60V,10Ω)(P溝道增強型MOS場效應管(漏電流-0.18A, 漏源電壓-60V,導通電阻10Ω))
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