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參數(shù)資料
| 型號(hào)： | NDC7003P |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | Dual P-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | 340 mA, 60 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SUPERSOT-6 |
| 文件頁數(shù)： | 1/10頁 |
| 文件大?。?/td> | 259K |
| 代理商： | NDC7003P |
March 1996
NDC7003P
Dual P-Channel Enhancement Mode Field Effect Transistor
General Description
Features
____________________________________________________________________________________________
Absolute Maximum Ratings
T
A
= 25°C unless otherwise noted
Symbol
Parameter
NDC7003P
Units
V
DSS
V
GSS
Drain-Source Voltage
-50
V
Gate-Source Voltage - Continuous
-20
V
I
D
Drain Current - Continuous
(Note 1a)
-0.34
A
- Pulsed
-1
P
D
Maximum Power Dissipation
(Note 1a)
0.96
W
(Note 1b)
0.9
(Note 1c)
0.7
T
J
,T
STG
Operating and Storage Temperature Range
-55 to 150
°C
THERMAL CHARACTERISTICS
R
θ
JA
R
θ
JC
Thermal Resistance, Junction-to-Ambient
(Note 1a)
130
°C/W
Thermal Resistance, Junction-to-Case
(Note 1)
60
°C/W
-0.34A, -50V. R
DS(ON)
= 5
@ V
GS
=-10V.
High density cell design for low R
DS(ON)
.
Proprietary SuperSOT
TM
-6 package design using copper
lead frame for superior thermal and electrical capabilities.
High saturation current
.
1
5
4
6
3
2
SOT-6 (SuperSOT
TM
-6)
These dual P-Channel enhancement mode power field
effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This
very high density process has been designed to minimize
on-state resistance, provide rugged and reliable
performance and fast switching. This product is
particularly suited to low voltage applications requiring a
low current high side switch.
1997 Fairchild Semiconductor Corporation
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| NDF0610 | P-Channel Enhancement Mode Field Effect Transistor（-0.18A，-60V，10Ω）(P溝道增強(qiáng)型MOS場(chǎng)效應(yīng)管（漏電流-0.18A, 漏源電壓-60V，導(dǎo)通電阻10Ω）) |
| NDS0610 | P-Channel Enhancement Mode Field Effect Transistor（-0.12A，-60V，10Ω）(P溝道增強(qiáng)型MOS場(chǎng)效應(yīng)管（漏電流-0.12A, 漏源電壓-60V，導(dǎo)通電阻10Ω）) |
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| NDH8303N | N-Channel Enhancement Mode Field Effect Transistor（3.8A，20V，0.035Ω）(N溝道增強(qiáng)型MOS場(chǎng)效應(yīng)管（漏電流3.8A, 漏源電壓20V，導(dǎo)通電阻0.035Ω）) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NDC7003P_Q | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| NDC-L | 制造商:RRE 制造商全稱:RRE 功能描述:Standard Magnets |
| NDC-M | 制造商:RRE 制造商全稱:RRE 功能描述:Standard Magnets |
| NDC-S | 制造商:RRE 制造商全稱:RRE 功能描述:Standard Magnets |
| NDC-T | 制造商:RRE 制造商全稱:RRE 功能描述:Standard Magnets |
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