參數(shù)資料
型號： NDB6030L
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： N-Channel Logic Level Enhancement Mode Field Effect Transistor（52A,30V，0.00135Ω）(N溝道邏輯電平增強型MOS場效應管（漏電流52A, 漏源電壓30V，導通電阻0.0135Ω）)
中文描述： 52 A, 30 V, 0.0135 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
文件頁數(shù)： 2/12頁
文件大?。?/td> 357K
代理商： NDB6030L
Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
DRAIN-SOURCE AVALANCHE RATINGS
(Note 1)
W
DSS
I
AR
OFF CHARACTERISTICS
Single Pulse Drain-Source Avalanche Energy V
DD
= 15 V, I
D
= 52 A
Maximum Drain-Source Avalanche Current
100
mJ
52
A
BV
DSS
I
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250 μA
V
DS
= 24 V, V
GS
= 0 V
30
V
Zero Gate Voltage Drain Current
10
μA
T
J
= 125
o
C
1
mA
I
GSSF
I
GSSR
ON CHARACTERISTICS
(Note 1)
Gate - Body Leakage, Forward
V
GS
= 16 V, V
DS
= 0 V
V
GS
= -16 V, V
DS
= 0 V
100
nA
Gate - Body Leakage, Reverse
-100
nA
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250 μA
1
1.6
3
V
T
J
= 125
o
C
0.7
1
2.2
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
= 10 V, I
D
= 26 A
0.011
0.0135
T
J
= 125
o
C
0.017
0.024
V
GS
= 4.5 V, I
D
= 21 A
V
GS
= 10 V, V
DS
= 10 V
V
GS
= 4.5 V, V
DS
= 10 V
V
DS
= 10 V, I
D
= 26 A
0.018
0.02
I
D(on)
On-State Drain Current
60
A
15
g
FS
DYNAMIC CHARACTERISTICS
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
Forward Transconductance
32
S
V
= 15 V, V
GS
= 0 V,
f = 1.0 MHz
1350
pF
800
pF
300
pF
NDP6030L Rev.E
相關PDF資料
PDF描述
NDB6030PL P-Channel Logic Level Enhancement Mode Field Effect Transistor（-30A,-30V，0.042Ω）(P溝道邏輯增強型MOS場效應管（漏電流-30A, 漏源電壓-30V，導通電阻0.042Ω）)
NDB6050L N-Channel Logic Level Enhancement Mode Field Effect Transistor
NDP6050L N-Channel Logic Level Enhancement Mode Field Effect Transistor（48A,50V，0.025Ω）(N溝道邏輯增強型MOS場效應管（漏電流48A, 漏源電壓50V，導通電阻0.025Ω）)
NDB6050 N-Channel Enhancement Mode Field Effect Transistor
NDP6050 N-Channel Enhancement Mode Field Effect Transistor（48A,50V，0.025Ω）(N溝道增強型MOS場效應管（漏電流48A, 漏源電壓50V，導通電阻0.025Ω）)
相關代理商/技術參數(shù)
參數(shù)描述
NDB6030PL 功能描述:MOSFET P-Ch LL FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDB603AL 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDB6050 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Enhancement Mode Field Effect Transistor
NDB6050L 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDB6051 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Enhancement Mode Field Effect Transistor
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