參數(shù)資料
型號(hào)： NDB6030L
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： N-Channel Logic Level Enhancement Mode Field Effect Transistor（52A,30V，0.00135Ω）(N溝道邏輯電平增強(qiáng)型MOS場效應(yīng)管（漏電流52A, 漏源電壓30V，導(dǎo)通電阻0.0135Ω）)
中文描述： 52 A, 30 V, 0.0135 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
文件頁數(shù)： 1/12頁
文件大?。?/td> 357K
代理商： NDB6030L
June 1996
NDP6030L / NDB6030L
N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
Features
_______________________________________________________________________________
Absolute Maximum Ratings
Symbol
Parameter
T
C
= 25°C unless otherwise noted
NDP6030L
NDB6030L
Units
V
DSS
V
GSS
Drain-Source Voltage
30
V
Gate-Source Voltage - Continuous
± 16
V
I
D
Drain Current
- Continuous
52
A
- Pulsed
156
P
D
Total Power Dissipation @ T
C
= 25
°
C
Derate above 25
°
C
75
W
0.5
W/
°
C
T
J
,T
STG
T
L
Operating and Storage Temperature Range
-65 to 175
°C
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
275
°C
THERMAL CHARACTERISTICS
R
θ
JC
R
θ
JA
Thermal Resistance, Junction-to-Case
2
°C/W
Thermal Resistance, Junction-to-Ambient
62.5
°C/W
NDP6030L Rev.E
These N-Channel logic level enhancement mode power
field effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This very
high density process is especially tailored to minimize
on-state resistance. These devices are particularly suited
for low voltage applications such as DC/DC converters
and high efficiency switching circuits where fast
switching, low in-line power loss, and resistance to
transients are needed.
52 A, 30 V. R
DS(ON)
= 0.0135
@ V
GS
=10 V
R
DS(ON)
= 0.020
@ V
GS
=4.5 V
.
Critical DC electrical parameters specified at elevated
temperature.
Rugged internal source-drain diode can eliminate the need
for an external Zener diode transient suppressor.
High density cell design for extremely low R
DS(ON)
.
175°C maximum junction temperature rating.
S
D
G
1998 Fairchild Semiconductor Corporation
相關(guān)PDF資料
PDF描述
NDB6030PL P-Channel Logic Level Enhancement Mode Field Effect Transistor（-30A,-30V，0.042Ω）(P溝道邏輯增強(qiáng)型MOS場效應(yīng)管（漏電流-30A, 漏源電壓-30V，導(dǎo)通電阻0.042Ω）)
NDB6050L N-Channel Logic Level Enhancement Mode Field Effect Transistor
NDP6050L N-Channel Logic Level Enhancement Mode Field Effect Transistor（48A,50V，0.025Ω）(N溝道邏輯增強(qiáng)型MOS場效應(yīng)管（漏電流48A, 漏源電壓50V，導(dǎo)通電阻0.025Ω）)
NDB6050 N-Channel Enhancement Mode Field Effect Transistor
NDP6050 N-Channel Enhancement Mode Field Effect Transistor（48A,50V，0.025Ω）(N溝道增強(qiáng)型MOS場效應(yīng)管（漏電流48A, 漏源電壓50V，導(dǎo)通電阻0.025Ω）)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NDB6030PL 功能描述:MOSFET P-Ch LL FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDB603AL 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDB6050 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Enhancement Mode Field Effect Transistor
NDB6050L 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDB6051 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Enhancement Mode Field Effect Transistor
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