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參數(shù)資料
| 型號： | NDB6030PL |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | P-Channel Logic Level Enhancement Mode Field Effect Transistor（-30A,-30V，0.042Ω）(P溝道邏輯增強型MOS場效應(yīng)管（漏電流-30A, 漏源電壓-30V，導(dǎo)通電阻0.042Ω）) |
| 中文描述： | 30 A, 30 V, 0.025 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 56K |
| 代理商： | NDB6030PL |
June 1997
NDP6030PL / NDB6030PL
P-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
Features
________________________________________________________________________________
Absolute Maximum Ratings
Symbol
Parameter
T
C
= 25°C unless otherwise noted
NDP6030PL
NDB6030PL
Units
V
DSS
Drain-Source Voltage
-30
V
V
GSS
I
D
Gate-Source Voltage - Continuous
±16
V
Drain Current
- Continuous
-30
A
- Pulsed
-90
P
D
Total Power Dissipation @ T
C
= 25
°
C
Derate above 25
°
C
75
W
0.5
T
J
,T
STG
T
L
Operating and Storage Temperature Range
-65 to 175
°C
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
275
°C
T
J
,T
STG
Operating and Storage Temperature Range
-65 to 175
°C
THERMAL CHARACTERISTICS
R
θ
JC
R
θ
J A
Thermal Resistance, Junction-to-Case
2
°
C/W
Thermal Resistance, Junction-to-Ambient
62.5
°
C/W
NDP6030PL Rev.B1
-30 A, -30 V. R
DS(ON)
= 0.042
@ V
GS
= -4.5 V
R
DS(ON)
= 0.025
@ V
GS
= -10 V
.
Critical DC electrical parameters specified at elevated
temperature.
Rugged internal source-drain diode can eliminate the need
for an external Zener diode transient suppressor.
High density cell design for extremely low R
DS(ON)
.
175°C maximum junction temperature rating.
These P-Channel logic level enhancement mode power field
effect transistors are produced using Fairchild's proprietary,
high cell density, DMOS technology. This very high density
process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage
applications such as DC/DC converters and high efficiency
switching circuits where fast switching, low in-line power loss,
and resistance to transients are needed.
S
D
G
1997 Fairchild Semiconductor Corporation
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