參數(shù)資料
型號(hào)： NDB6030PL
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： P-Channel Logic Level Enhancement Mode Field Effect Transistor（-30A,-30V，0.042Ω）(P溝道邏輯增強(qiáng)型MOS場效應(yīng)管（漏電流-30A, 漏源電壓-30V，導(dǎo)通電阻0.042Ω）)
中文描述： 30 A, 30 V, 0.025 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB
文件頁數(shù)： 2/4頁
文件大小： 56K
代理商： NDB6030PL
Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
DSS
BV
DSS
/
T
J
I
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= -250 μA
I
D
= -250 μA, Referenced to 25
o
C
-30
V
Breakdown Voltage Temp. Coefficient
-36
mV/
o
C
Zero Gate Voltage Drain Current
V
DS
= -24 V, V
GS
= 0 V
-250
μA
T
J
= 125°C
1
mA
I
GSSF
I
GSSR
ON CHARACTERISTICS
(Note)
Gate - Body Leakage, Forward
V
GS
= 16 V, V
DS
= 0 V
V
GS
= -16 V, V
DS
= 0 V
-100
nA
Gate - Body Leakage, Reverse
-100
nA
V
GS(th)
/
T
J
V
GS(th)
Gate Threshold Voltage Temp.Coefficient
I
D
= -250 μA, Referenced to 25
o
C
2.2
mV/
o
C
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= -250 μA
-1
-1.4
-2
V
T
J
= 125°C
-0.8
-1.08
-1.6
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
= -4.5 V, I
D
= -15 A
0.037
0.042
T
J
= 125°C
0.053
0.075
V
GS
= -10 V, I
D
= -19 A
V
GS
= -4.5 V, V
DS
= -5 V
V
DS
= -4.5 V, I
D
= -19 A
0.021
0.025
I
D(on)
g
FS
DYNAMIC CHARACTERISTICS
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
(Note)
On-State Drain Current
-20
A
Forward Transconductance
20
S
V
= -15 V, V
GS
= 0 V,
f = 1.0 MHz
1570
pF
975
pF
360
pF
t
D(on)
Turn - On Delay Time
V
DD
= -15 V, I
D
= -5 A,
V
GS
= -5 V, R
GEN
= 6
12.5
25
nS
t
r
t
D(off)
Turn - On Rise Time
60
120
nS
Turn - Off Delay Time
50
100
nS
t
f
Q
g
Q
gs
Q
gd
DRAIN-SOURCE DIODE CHARACTERISTICS
Turn - Off Fall Time
52
100
nS
Total Gate Charge
V
= -12 V
I
D
= -30 A , V
GS
= -5 V
26
36
nC
Gate-Source Charge
6.5
nC
Gate-Drain Charge
11.5
nC
I
S
I
SM
V
SD
t
rr
I
rr
Maximum Continuos Drain-Source Diode Forward Current
-30
A
Maximum Pulsed Drain-Source Diode Forward Current
-100
A
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= -15 A
(Note)
V
GS
= 0 V, I
= -30 A
dI
F
/dt = 100 A/μs
-0.92
-1.3
V
Reverse Recovery Time
58
ns
Reverse Recovery Current
-1.5
A
Note:
Pulse Test: Pulse Width < 300 μs, Duty Cycle < 2.0%.
NDP6030PL Rev.B1
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PDF描述
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參數(shù)描述
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