參數(shù)資料
型號(hào)： NAND04GA3C2AN1E
廠商： 意法半導(dǎo)體
英文描述： 4Gbit, 2112 Byte Page, 3V, Multi-level NAND Flash Memory
中文描述： 4Gbit的，2112字節(jié)的頁，3V供電，多級(jí)NAND閃存
文件頁數(shù)： 38/51頁
文件大?。?/td> 374K
代理商： NAND04GA3C2AN1E
12 DC and AC parameters
NAND04GA3C2A, NAND04GW3C2A
38/51
AC Characteristics for Operations, V
DDQ
3V Devices
(1)
Alt.
Symbol
Table 20.
Symbol
Parameter
3V I/O
Unit
t
ALLRL1
t
AR
Address Latch Low to
Read Enable Low
Read Electronic Signature
Min
20
ns
t
ALLRL2
Read cycle
Min
20
ns
t
BHRL
t
RR
Ready/Busy High to Read Enable Low
Min
20
ns
t
BLBH1
Ready/Busy Low to
Ready/Busy High
Read Busy time
Max
60
μs
t
BLBH2
t
PROG
Program Busy time
Max
2000
μs
t
BLBH3
t
BERS
Erase Busy time
Max
3
ms
t
BLBH4
Reset Busy time, during ready
Max
5
μs
t
WHBH1
t
RST
Write Enable High to
Ready/Busy High
Reset Busy time, during read
Max
20
μs
Reset Busy time, during program
Max
40
μs
Reset Busy time, during erase
Max
200
μs
t
CLLRL
t
CLR
Command Latch Low to Read Enable Low
Min
15
ns
t
DZRL
t
IR
Data Hi-Z to Read Enable Low
Min
0
ns
t
EHQZ
t
CHZ
Chip Enable High to Output Hi-Z
Max
30
ns
t
ELQV
t
CEA
Chip Enable Low to Output Valid
Max
50
ns
t
RHRL
t
REH
Read Enable High to
Read Enable Low
Read Enable High Hold time
Min
20
ns
t
RHQZ
t
RHZ
Read Enable High to Output Hi-Z
Max
30
ns
t
RLRH
t
RP
Read Enable Low to
Read Enable High
Read Enable Pulse Width
Min
40
ns
t
RLRL
t
RC
Read Enable Low to
Read Enable Low
Read Cycle time
Min
60
ns
t
RLQV
t
REA
Read Enable Low to
Output Valid
Read Enable Access time
Max
45
ns
Read ES Access time
(2)
t
WHBH
t
R
Write Enable High to
Ready/Busy High
Read Busy time
Max
60
μs
t
WHBL
t
WB
Write Enable High to Ready/Busy Low
Max
100
ns
t
WHRL
t
VHWH(3)
t
VLWH(3)
t
WHR
Write Enable High to Read Enable Low
Min
80
ns
t
WW
Write Protection time
Min
100
ns
Min
100
ns
1.
AC Characteristics for V
DDQ
1.8V devices are still to be determined.
ES = Electronic Signature.
2.
3.
WP High to W High during Program/Erase Enable operations.
相關(guān)PDF資料
PDF描述
NAND04GA3C2AN6F 4Gbit, 2112 Byte Page, 3V, Multi-level NAND Flash Memory
NAND04GW3C2AN6E 4Gbit, 2112 Byte Page, 3V, Multi-level NAND Flash Memory
NAND128R3A2AZA1 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
NAND128W3A0AV6 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
NAND256R3A0AZB6 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NAND04GR3B2DDI6 制造商:Micron Technology Inc 功能描述:NAND - Gel-pak, waffle pack, wafer, diced wafer on film
NAND04GR3B2DN6E 功能描述:IC FLASH 4GBIT 48TSOP RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:576 系列:- 格式 - 存儲(chǔ)器:閃存 存儲(chǔ)器類型:閃存 - NAND 存儲(chǔ)容量:512M（64M x 8） 速度:- 接口:并聯(lián) 電源電壓:2.7 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應(yīng)商設(shè)備封裝:48-TSOP 包裝:托盤 其它名稱:497-5040
NAND04GR3B2DZL6F 制造商:Micron Technology Inc 功能描述:NAND - Tape and Reel
NAND04GR3B2EN6E 制造商:Micron Technology Inc 功能描述:NAND - Trays
NAND04GR3B2EN6F 制造商:Micron Technology Inc 功能描述:NAND - Tape and Reel
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購

我的聯(lián)系方式

*
*
*