參數(shù)資料
型號： NAND04GA3C2AN1E
廠商： 意法半導(dǎo)體
英文描述： 4Gbit, 2112 Byte Page, 3V, Multi-level NAND Flash Memory
中文描述： 4Gbit的，2112字節(jié)的頁，3V供電，多級NAND閃存
文件頁數(shù)： 24/51頁
文件大?。?/td> 374K
代理商： NAND04GA3C2AN1E
6 Device operations
NAND04GA3C2A, NAND04GW3C2A
24/51
Figure 10.
Block Erase Operation
6.9
Reset
The Reset command is used to reset the Command Interface and Status Register. If the
Reset command is issued during any operation, the operation will be aborted. If it was a
program or erase operation that was aborted, the contents of the memory locations being
modified will no longer be valid as the data will be partially programmed or erased.
If the device has already been reset then the new Reset command will not be accepted.
The Ready/Busy signal goes Low for t
WHBH1
after the Reset command is issued. The value
of t
WHBH1
depends on the operation that the device was performing when the command was
issued, refer to
Table 20
for the values.
6.10
Read Status Register
The device contains a Status Register which provides information on the current or previous
Program or Erase operation. The various bits in the Status Register convey information and
errors on the operation.
The Status Register is read by issuing the Read Status Register command. The Status
Register information is present on the output data bus (I/O0-I/O7) on the falling edge of Chip
Enable or Read Enable, whichever occurs last. When several memories are connected in a
system, the use of Chip Enable and Read Enable signals allows the system to poll each
device separately, even when the Ready/Busy pins are common-wired. It is not necessary to
toggle the Chip Enable or Read Enable signals to update the contents of the Status
Register.
After the Read Status Register command has been issued, the device remains in Read
Status Register mode until another command is issued. Therefore if a Read Status Register
command is issued during a Random Read cycle a new Read command must be issued to
continue with a Page Read operation.
Refer to
Table 9
where Status Register bits are summarized. It should also be read in
conjunction with the following text descriptions.
6.10.1
Write Protection Bit (SR7)
The Write Protection bit can be used to identify if the device is protected or not. If the Write
Protection bit is set to ‘1’ the device is not protected and program or erase operations are
allowed. If the Write Protection bit is set to ‘0’ the device is protected and program or erase
operations are not allowed.
I/O
RB
BlocInputs
SR0
ai07593
D0h
70h
60h
Block Erase
Setup Code
Confirm
Code
Read Status Register
Busy
(Erase Busy time)
相關(guān)PDF資料
PDF描述
NAND04GA3C2AN6F 4Gbit, 2112 Byte Page, 3V, Multi-level NAND Flash Memory
NAND04GW3C2AN6E 4Gbit, 2112 Byte Page, 3V, Multi-level NAND Flash Memory
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NAND256R3A0AZB6 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
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