參數(shù)資料
型號: NAND01GR4B2BZA1F
廠商: STMICROELECTRONICS
元件分類: PROM
英文描述: 64M X 16 FLASH 1.8V PROM, 25000 ns, PBGA63
封裝: 9 X 11 MM, 1 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, VFBGA-63
文件頁數(shù): 63/63頁
文件大?。?/td> 684K
代理商: NAND01GR4B2BZA1F
NAND01G-B2B, NAND02G-B2C
Summary description
9/63
For information on how to order these options refer to Table 29: Ordering Information
Scheme. Devices are shipped from the factory with Block 0 always valid and the memory
content bits, in valid blocks, erased to ’1’.
See Table 2: Product Description, for all the devices available in the family.
Table 2.
Product Description
Reference
Part Number
Density
Bus
Width
Page
Size
Block
Size
Memory
Array
Operatin
g Voltage
Timings
Package
Random
access
time
(max)
Sequential
access
time
(min)
Page
Program
time
(typ)
Block
Erase
(typ)
NAND01G
-B2B
NAND01GR3B2B
1Gbit
x8
2048+
64
Bytes
128K+
4K
Bytes
64
Pages x
1024
Blocks
1.7 to
1.95V
25s
50ns
200s
2ms
VFBGA63
9x11mm
NAND01GW3B2B
2.7 to
3.6V
25s
30ns
TSOP48
NAND01GR4B2B
x16
1024+
32
Words
64K+
2K
Words
1.7 to
1.95V
25s
50ns
(1)
NAND01GW4B2B
2.7 to
3.6V
25s
30ns
NAND02G
-B2C
NAND02GR3B2C
2Gbit
x8
2048+
64
Bytes
128K+
4K
Bytes
64
Pages x
2048
Blocks
1.7 to
1.95V
25s
50ns
2ms
VFBGA63
9.5x12mm
NAND02GW3B2C
2.7 to
3.6V
25s
30ns
TSOP48
NAND02GR4B2C
x16
1024+
32
Words
64K+
2K
Words
1.7 to
1.95V
25s
50ns
NAND02GW4B2C
2.7 to
3.6V
25s
30ns
1.
x16 organization only available for MCP
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NAND01GR4B2BZA6F 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory
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