參數(shù)資料
型號: NAND01GR4B2BZA1F
廠商: STMICROELECTRONICS
元件分類: PROM
英文描述: 64M X 16 FLASH 1.8V PROM, 25000 ns, PBGA63
封裝: 9 X 11 MM, 1 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, VFBGA-63
文件頁數(shù): 43/63頁
文件大?。?/td> 684K
代理商: NAND01GR4B2BZA1F
DC And AC parameters
NAND01G-B2B, NAND02G-B2C
48/63
Figure 19.
Command Latch AC Waveforms
1.
The time to Ready depends on the value of the pull-up resistor tied to the Ready/Busy pin. See Figure 31, Figure 32 and
2.
tWHWH is the time from W rising edge during the final address cycle to W rising edge during the first data cycle.
3.
During a Program/Erase Enable Operation, tWW is the delay from WP high to W High.
During a Program/Erase Disable Operation, tWW is the delay from WP Low to W High.
4.
ES = Electronic Signature.
ai13105
CL
E
W
AL
I/O
tCLHWH
tELWH
tWHCLL
tWHEH
tWLWH
tALLWH
tWHALH
Command
tDVWH
tWHDX
(CL Setup time)
(CL Hold time)
(Data Setup time)
(Data Hold time)
(ALSetup time)
(AL Hold time)
H(E Setup time)
(E Hold time)
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