參數(shù)資料
型號(hào)： MX29LV640BUTC-12G
廠商： MACRONIX INTERNATIONAL CO LTD
元件分類： DRAM
英文描述： 64M-BIT [4M x 16] CMOS EQUAL SECTOR FLASH MEMORY
中文描述： 4M X 16 FLASH 2.7V PROM, 120 ns, PDSO48
封裝： 12 X 20 MM, ROHS COMPLIANT, MO-142, TSOP1-48
文件頁數(shù)： 27/64頁
文件大小： 509K
代理商： MX29LV640BUTC-12G
27
P/N:PM1081
REV. 1.0, MAR. 08, 2005
MX29LV640BU
still open. If Q3 is high ("1") the internally controlled erase
cycle has begun; attempts to write subsequent commands
to the device will be ignored until the erase operation is
completed as indicated by Data Polling or Toggle Bit. If
Q3 is low ("0"), the device will accept additional sector
erase commands. To insure the command has been ac-
cepted, the system software should check the status of
Q3 prior to and following each subsequent sector erase
command. If Q3 were high on the second status check,
the command may not have been accepted.
If the time between additional erase commands from the
system can be less than 50us, the system need not to
monitor Q3.
RY/BY#:READY/BUSY# OUTPUT
The RY/BY# is a dedicated, open-drain output pin that
indicates whether an Embedded Algorithm is in progress
or complete. The RY/BY# status is valid after the rising
edge of the final WE# pulse in the command sequence.
Since RY/BY# is an open-drain output, several RY/BY#
pins can be tied together in parallel with a pull-up resistor
to VCC .
If the output is low (Busy), the device is actively erasing
or programming. (This includes programming in the Erase
Suspend mode.) If the output is high (Ready), the device
is ready to read array data (including during the Erase
Suspend mode), or is in the standby mode.
相關(guān)PDF資料
PDF描述
MX29LV640BUTC-90 64M-BIT [4M x 16] CMOS EQUAL SECTOR FLASH MEMORY
MX29LV640BUTC-90G 64M-BIT [4M x 16] CMOS EQUAL SECTOR FLASH MEMORY
MX29LV640BUTI-12 64M-BIT [4M x 16] CMOS EQUAL SECTOR FLASH MEMORY
MX29LV640BUTI-12G 64M-BIT [4M x 16] CMOS EQUAL SECTOR FLASH MEMORY
MX29LV640BUTI-90 64M-BIT [4M x 16] CMOS EQUAL SECTOR FLASH MEMORY
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MX29LV640EBTI-70G 功能描述:IC FLASH PAR 3V 64MB 70NS 48TSOP RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:MX29LV 標(biāo)準(zhǔn)包裝:1 系列:- 格式 - 存儲(chǔ)器:閃存 存儲(chǔ)器類型:閃存 - NAND 存儲(chǔ)容量:4G（256M x 16） 速度:- 接口:并聯(lián) 電源電壓:2.7 V ~ 3.6 V 工作溫度:0°C ~ 70°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應(yīng)商設(shè)備封裝:48-TSOP I 包裝:Digi-Reel® 其它名稱:557-1461-6
MX29LV640EBXEI-70G 功能描述:IC FLASH PAR 64MB 70NS 48FBGA RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:MX29LV 標(biāo)準(zhǔn)包裝:1 系列:- 格式 - 存儲(chǔ)器:閃存 存儲(chǔ)器類型:閃存 - NAND 存儲(chǔ)容量:4G（256M x 16） 速度:- 接口:并聯(lián) 電源電壓:2.7 V ~ 3.6 V 工作溫度:0°C ~ 70°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應(yīng)商設(shè)備封裝:48-TSOP I 包裝:Digi-Reel® 其它名稱:557-1461-6
MX29LV640EBXEI-70GTR 制造商:Macronix International Co Ltd 功能描述:MX29LV Series 3 V 64 Mb (8M x 8/4M x 16) 70 ns Parallel Flash - TFBGA-48
MX29LV640EBXEI-90G 制造商:Macronix International Co Ltd 功能描述:MX29LV Series 3 V 64 Mb (8M x 8/4M x 16) 90 ns Parallel Flash - TFBGA-48
MX29LV640ETTI-70G 功能描述:IC FLASH PAR 3V 64MB 70NS 48TSOP RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:MX29LV 標(biāo)準(zhǔn)包裝:1 系列:- 格式 - 存儲(chǔ)器:閃存 存儲(chǔ)器類型:閃存 - NAND 存儲(chǔ)容量:4G（256M x 16） 速度:- 接口:并聯(lián) 電源電壓:2.7 V ~ 3.6 V 工作溫度:0°C ~ 70°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應(yīng)商設(shè)備封裝:48-TSOP I 包裝:Digi-Reel® 其它名稱:557-1461-6
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購

我的聯(lián)系方式

*
*
*