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參數(shù)資料
| 型號： | MX29LV640BUTI-12G |
| 廠商： | MACRONIX INTERNATIONAL CO LTD |
| 元件分類： | DRAM |
| 英文描述： | 64M-BIT [4M x 16] CMOS EQUAL SECTOR FLASH MEMORY |
| 中文描述： | 4M X 16 FLASH 2.7V PROM, 120 ns, PDSO48 |
| 封裝： | 12 X 20 MM, ROHS COMPLIANT, MO-142, TSOP1-48 |
| 文件頁數(shù)： | 1/64頁 |
| 文件大?。?/td> | 509K |
| 代理商： | MX29LV640BUTI-12G |
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1
P/N:PM1081
REV. 1.0, MAR. 08, 2005
MX29LV640BU
64M-BIT [4M x 16] CMOS EQUAL SECTOR FLASH MEMORY
FEATURES
GENERAL FEATURES
4,194,304 x 16 byte structure
One hundred twenty-eight Equal Sectors with 32K
word each
- Any combination of sectors can be erased with erase
suspend/resume function
Sector Protection/Chip Unprotect
- Provides sector group protect function to prevent
program or erase operation in the protected sector
group
- Provides chip unprotect function to allow code
changes
- Provides temporary sector group unprotect function
for code changes in previously protected sector groups
Secured Silicon Sector
- Provides a 128-word area for code or data that can
be permanently protected.
- Once this sector is protected, it is prohibited to pro-
gram or erase within the sector again.
Single Power Supply Operation
- 2.7 to 3.6 volt for read, erase, and program opera-
tions
Latch-up protected to 250mA from -1V to Vcc + 1V
Low Vcc write inhibit is equal to or less than 1.5V
Compatible with JEDEC standard
- Pinout and software compatible to single power sup-
ply Flash
PERFORMANCE
High Performance
- Access time: 90/120ns
- Program time: 11us/word, 45s/chip (typical)
- Erase time: 0.9s/sector, 45s/chip (typical)
Low Power Consumption
- Low active read current: 9mA (typical) at 5MHz
- Low standby current: 0.2uA(typ.)
Minimum 100,000 erase/program cycle
20-year data retention
SOFTWARE FEATURES
Support Common Flash Interface (CFI)
- Flash device parameters stored on the device and
provide the host system to access.
Erase Suspend/ Erase Resume
- Suspends sector erase operation to read data from
or program data to another sector which is not being
erased
Status Reply
- Data# polling & Toggle bits provide detection of pro-
gram and erase operation completion
HARDWARE FEATURES
Ready/Busy (RY/BY#) Output
- Provides a hardware method of detecting program
and erase operation completion
Hardware Reset (RESET#) Input
- Provides a hardware method to reset the internal
state machine to read mode
ACC input pin
- Provides accelerated program capability
WP# pin
- At V
IL
, allows protection of first sector, regardless of
sector protection/unprotected status
- At V
IH
, allows removal of protection
PACKAGE
48-pin TSOP
63-ball CSP
GENERAL DESCRIPTION
The MX29LV640BU is a 64-mega bit Flash memory or-
ganized as 4M bytes of 16 bits. MXIC's Flash memories
offer the most cost-effective and reliable read/write non-
volatile random access memory. The MX29LV640BU is
packaged in 48-pin TSOP and 63-ball CSP. It is designed
to be reprogrammed and erased in system or in standard
EPROM programmers.
The standard MX29LV640BU offers access time as fast
as 90ns, allowing operation of high-speed microproces-
sors without wait states. To eliminate bus contention,
the MX29LV640BU has separate chip enable (CE#) and
output enable (OE#) controls.
MXIC's Flash memories augment EPROM functionality
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MX29LV640BUTI-90 | 64M-BIT [4M x 16] CMOS EQUAL SECTOR FLASH MEMORY |
| MX29LV640BUTI-90G | 64M-BIT [4M x 16] CMOS EQUAL SECTOR FLASH MEMORY |
| MX29LV640BUXBC-12 | 64M-BIT [4M x 16] CMOS EQUAL SECTOR FLASH MEMORY |
| MX29LV640BUXBC-12G | 64M-BIT [4M x 16] CMOS EQUAL SECTOR FLASH MEMORY |
| MX29LV640BUXBC-90 | 64M-BIT [4M x 16] CMOS EQUAL SECTOR FLASH MEMORY |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MX29LV640EBTI-70G | 功能描述:IC FLASH PAR 3V 64MB 70NS 48TSOP RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:MX29LV 標(biāo)準(zhǔn)包裝:1 系列:- 格式 - 存儲器:閃存 存儲器類型:閃存 - NAND 存儲容量:4G（256M x 16） 速度:- 接口:并聯(lián) 電源電壓:2.7 V ~ 3.6 V 工作溫度:0°C ~ 70°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應(yīng)商設(shè)備封裝:48-TSOP I 包裝:Digi-Reel® 其它名稱:557-1461-6 |
| MX29LV640EBXEI-70G | 功能描述:IC FLASH PAR 64MB 70NS 48FBGA RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:MX29LV 標(biāo)準(zhǔn)包裝:1 系列:- 格式 - 存儲器:閃存 存儲器類型:閃存 - NAND 存儲容量:4G（256M x 16） 速度:- 接口:并聯(lián) 電源電壓:2.7 V ~ 3.6 V 工作溫度:0°C ~ 70°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應(yīng)商設(shè)備封裝:48-TSOP I 包裝:Digi-Reel® 其它名稱:557-1461-6 |
| MX29LV640EBXEI-70GTR | 制造商:Macronix International Co Ltd 功能描述:MX29LV Series 3 V 64 Mb (8M x 8/4M x 16) 70 ns Parallel Flash - TFBGA-48 |
| MX29LV640EBXEI-90G | 制造商:Macronix International Co Ltd 功能描述:MX29LV Series 3 V 64 Mb (8M x 8/4M x 16) 90 ns Parallel Flash - TFBGA-48 |
| MX29LV640ETTI-70G | 功能描述:IC FLASH PAR 3V 64MB 70NS 48TSOP RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:MX29LV 標(biāo)準(zhǔn)包裝:1 系列:- 格式 - 存儲器:閃存 存儲器類型:閃存 - NAND 存儲容量:4G（256M x 16） 速度:- 接口:并聯(lián) 電源電壓:2.7 V ~ 3.6 V 工作溫度:0°C ~ 70°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應(yīng)商設(shè)備封裝:48-TSOP I 包裝:Digi-Reel® 其它名稱:557-1461-6 |
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