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參數(shù)資料
| 型號(hào)： | MX28F640C3BTC-12 |
| 廠商： | MACRONIX INTERNATIONAL CO LTD |
| 元件分類： | DRAM |
| 英文描述： | 64M-BIT [4M x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY |
| 中文描述： | 4M X 16 FLASH 3V PROM, 120 ns, PDSO48 |
| 封裝： | 12 X 20 MM, MO-142, TSOP1-48 |
| 文件頁(yè)數(shù)： | 25/44頁(yè) |
| 文件大?。?/td> | 653K |
| 代理商： | MX28F640C3BTC-12 |
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25
P/N:PM0900
MX28F640C3T/B
REV. 0.6, AUG. 20, 2003
6.2.5 AC Characteristic -- Write Operation
Notes:
1. Write timing characteristics during erase suspend are the same as during write-only operations.
2. Refer to Table 5 for valid AIN or DIN.
3. Sampled, not 100% tested.
4. Write pulse width (tWP) is defined from CE or WE going low (whichever goes low last) to CE or WE going high
(whichever goes high first). Hence, tWP=tWLWH=tELEH=tELWH. Similarly, Write pulse width high (tWPH) is
defined from CE or WE going high (whichever goes high first) to CE or WE going low (whichever goes low first).
Hence, tWPH=tWHWL=tEHEL=tEHWL.
5. See Test Configuration.
6. Vcc Max = 3.3V.
-90
-110
Sym.
Parameter
Note
Min.
Min.
Unit
tPHWL/tPHEL
RESET High Recovery to WE(CE) Going Low
150
150
ns
tELWL/tWLEL
CE(WE) Setup to WE(CE) Going Low
0
0
ns
tELEH/tWLWH
WE(CE) Pulse Width
4
50
70
ns
tDVWH/tDVEH
Data Setup to WE(CE) Going High
2
50
60
ns
tAVWH/tAVEH
Address Setup to WE(CE) Going High
2
50
70
ns
tWHEH/tEHWH
CE(WE) Hold Time from WE(CE) High
0
0
ns
tWHDX/tEHDX
Data Hold Time from WE(CE) High
2
0
0
ns
tWHAX/tEHAX
Address Hold Time from WE(CE) High
2
0
0
ns
tWHWL/tEHEL
WE(CE) Pulse Width High
4
30
30
ns
tVPWH/tVPEH
VPP Setup to WE(CE) Going High
3
200
200
ns
tQVVL
VPP Hold from Valid SRD
3
0
0
ns
tBHWH/tBHEH
WP Setup to WE(CE) Going High
3
0
0
ns
tQVBL
WP Hold from Valid SRD
3
0
0
ns
tWHGL
WE High to OE Going Low
3
30
30
ns
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MX28F640C3BTC-90 | 制造商:MCNIX 制造商全稱:Macronix International 功能描述:64M-BIT [4M x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY |
| MX28F640C3BTI-12 | 制造商:MCNIX 制造商全稱:Macronix International 功能描述:64M-BIT [4M x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY |
| MX28F640C3BTI-90 | 制造商:MCNIX 制造商全稱:Macronix International 功能描述:64M-BIT [4M x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY |
| MX28F640C3BTTC-12 | 制造商:MCNIX 制造商全稱:Macronix International 功能描述:64M-BIT [4M x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY |
| MX28F640C3BTTC-90 | 制造商:MCNIX 制造商全稱:Macronix International 功能描述:64M-BIT [4M x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY |
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