參數(shù)資料
型號: MX28F640C3BTC-12
廠商: MACRONIX INTERNATIONAL CO LTD
元件分類: DRAM
英文描述: 64M-BIT [4M x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
中文描述: 4M X 16 FLASH 3V PROM, 120 ns, PDSO48
封裝: 12 X 20 MM, MO-142, TSOP1-48
文件頁數(shù): 12/44頁
文件大小: 653K
代理商: MX28F640C3BTC-12
12
P/N:PM0900
MX28F640C3T/B
REV. 0.6, AUG. 20, 2003
4 COMMAND DEFINITIONS
When the VPP voltage < VPPLK, read operations from
the status register, identifier codes, or sectors are en-
abled. Placing VPP on VPPH1/2 enables successful
sector erase, full chip erase, word write and sector lock/
unlock.
Device operations are selected by writing specific com-
mands into the CUI. Table 3 defines these commands.
Table 2. Bus Operation
1,2
Mode
Read
Output Disable
Standby
Reset
Write
Notes
1,2
2
2
2
2,3,4,5
RESET
VIH
VIH
VIH
VIL
VIH
CE
VIL
VIL
VIH
X
VIL
OE
VIL
VIH
X
X
VIH
WE
VIH
VIH
X
X
VIL
Q0~Q15
DOUT
High Z
High Z
High Z
DIN
Notes:
1. Refer to DC Characteristics for VPPLK, VPP1, VPP2, VPP3 voltage.
2. X can be VIL or VIH for pin and addresses.
3. RESET at GND
±
0.2 to ensure the lowest power consumption.
4. Refer to Table 3 for valid DIN during a write operation.
5. To program or erase the lockable sectors holds WP at VIH.
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